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Physical Review Letters

Volumn 106, Issue 20, 2011, Pages

Impact of disorder on the 5/2 fractional quantum Hall state

(7) Pan, W a Masuhara, N b Sullivan, N S b Baldwin, K W c West, K W c Pfeiffer, L N c Tsui, D C c

a SANDIA NATIONAL LABORATORIES (United States)

b UNIVERSITY OF FLORIDA (United States)

c PRINCETON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FRACTIONAL QUANTUM HALL EFFECTS; FRACTIONAL QUANTUM HALL STATE; GAAS; HIGH MOBILITY; HIGH QUALITY; INSULATED GATE; LONG-RANGE POTENTIAL; MODULATION-DOPED; QUANTUM WELL;

FIELD EFFECT TRANSISTORS; HALL EFFECT; HALL MOBILITY; HETEROJUNCTIONS;

QUANTUM THEORY;

EID: 79960675960 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.206806 Document Type: Article

Times cited : (62)

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