Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Rossler C ^a   Feil, T ^a   Mensch, P ^a   Ihn, T ^a   Ensslin, K ^a   Schuh, D ^b   Wegscheider, W ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE REDISTRIBUTION; DOPING LAYERS; ELECTRON DENSITIES; GAAS/ALGAAS HETEROSTRUCTURES; HETEROSTRUCTURES; HIGH MOBILITY; HIGH-MOBILITY ELECTRONS; IN-SITU; SCHOTTKY-GATE;

CRYSTALS; ELECTRON GAS; GALLIUM; TWO DIMENSIONAL;

ELECTRONS;

EID: 77951942928     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/4/043007     Document Type: Article

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