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Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

High-quality quantum point contacts in GaNAlGaN heterostructures

(7) Chou, H T a Luscher S a Goldhaber Gordon, D a Manfra, M J b Sergent, A M b West, K W b Molnar, R J c

a STANFORD UNIVERSITY (United States)

b LUCENT TECHNOLOGIES (United States)

c MIT LINCOLN LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRON CHANNELS; ELECTRON RESERVOIRS; QUANTUM POINT CONTACTS (QPC);

ELECTRIC CONDUCTANCE; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; GALLIUM NITRIDE; MAGNETIC FIELD EFFECTS; NANOTECHNOLOGY; PERMITTIVITY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS;

HETEROJUNCTIONS;

EID: 17044410156 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1862339 Document Type: Article

Times cited : (42)

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