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Volumn 311, Issue 7, 2009, Pages 1655-1657
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Gallium beam analysis and implications for the growth of ultra-high-mobility GaAs/AlGaAs heterostructures
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Author keywords
A1. Impurities; A1. Purification; A3. Molecular beam epitaxy; B1. Gallium compounds
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALS;
ELECTRON MOBILITY;
EPITAXIAL GROWTH;
GALLIUM COMPOUNDS;
HYDROGEN;
MASS SPECTROMETRY;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
OXYGEN;
PURIFICATION;
SEMICONDUCTOR QUANTUM WIRES;
THERMAL CYCLING;
A1. IMPURITIES;
A1. PURIFICATION;
A3. MOLECULAR BEAM EPITAXY;
B1. GALLIUM COMPOUNDS;
BACKGROUND IMPURITIES;
BEAM ANALYSIS;
BEAM COMPONENTS;
BEAM GEOMETRIES;
CURRENT LIMITS;
DENSITY DEPENDENCES;
GAAS/ALGAAS HETEROSTRUCTURES;
HETEROSTRUCTURES;
HIGH MOBILITIES;
HIGH PURITIES;
LOW TEMPERATURES;
OPERATING CONDITIONS;
SENSITIVITY RANGES;
THERMAL CYCLES;
ULTRA HIGHS;
ULTRA-HIGH-VACUUM SYSTEMS;
GALLIUM;
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EID: 63349111007
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.014 Document Type: Article |
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Times cited : (8)
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References (6)
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