Growth and electrical characterization of Al0.24Ga 0.76As/AlxGa1-xAs/Al0.24Ga 0.76As modulation-doped quantum wells with extremely low x

Applied Physics Letters

Volumn 102, Issue 25, 2013, Pages

  Gardner, Geoffrey C ^a   Watson, John D ^a   Mondal, Sumit ^a   Deng, Nianpei ^a   Csáthy, Gabor A ^a   Manfra, Michael J ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; ELECTRICAL CHARACTERIZATION; FRACTIONAL QUANTUM HALL STATE; MODULATION-DOPED; MODULATION-DOPED QUANTUM WELLS; QUANTUM HALL REGIME; SCATTERING MECHANISMS; ZERO MAGNETIC FIELDS;

ALLOYS; ALUMINUM; ELECTRON GAS; MODULATION; QUANTUM HALL EFFECT; SCATTERING; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM;

EID: 84879872327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812357     Document Type: Article

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