InSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices

Physical Review Letters

Volumn 101, Issue 22, 2008, Pages

  Buizert, Christo ^a,b   Koppens, Frank H L ^a   Pioro Ladrière, Michel ^b   Tranitz, Hans Peter ^c   Vink, Ivo T ^a   Tarucha, Seigo ^b,d   Wegscheider, Werner ^c   Vandersypen, Lieven M K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF REGENSBURG   (Germany)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR CENTERS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; POWER SPECTRUM; SCHOTTKY BARRIER DIODES;

AL CONTENTS; BACKGROUND CHARGE NOISES; CHARGE NOISES; DX CENTERS; ELECTROSTATIC GATES; GAAS/ALGAAS; GATED DEVICES; IN-SITU; LORENTZIAN; NOISE POWER SPECTRUMS; NOISE REDUCTIONS; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY GATES; SEMI-CONDUCTORS;

ELECTROSTATIC DEVICES;

EID: 57149113150     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.226603     Document Type: Article

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