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Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1722-1724

Electron mobility in very low density GaN/AlGaN/GaN heterostructures

(5) Manfra, M J a Baldwin, K W a Sergent, A M a Molnar, R J b Caissie, J b

a LUCENT TECHNOLOGIES (United States)

b MIT LINCOLN LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STRUCTURES; HALL BAR STRUCTURES; HETEROSTRUCTURE; TEMPERATURE (T) DEPENDENCES;

ANNEALING; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; SCATTERING; SUBSTRATES; THERMAL EFFECTS; VECTORS;

GALLIUM NITRIDE;

EID: 4944231350 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1784887 Document Type: Article

Times cited : (49)

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