MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106 cm2/V s

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1658-1661

  Umansky, V ^a   Heiblum, M ^a   Levinson, Y ^a   Smet, J ^b   Nubler J ^b   Dolev, M ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ALUMINUM ARSENIDE; CRYSTAL GROWTH; CRYSTALS; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; TWO DIMENSIONAL ELECTRON GAS;

A1. LOW-DIMENSIONAL STRUCTURES; A3. MOLECULAR BEAM EPITAXY; ALGAAS/GAAS; B2. SEMICONDUCTING GALLIUM ARSENIDE; DOPING PROCESS; FRACTIONAL QUANTUM HALL STATE; HETEROSTRUCTURES; HIGH MOBILITIES; INTERFACE QUALITIES; IONIZED DONORS; MBE GROWTHS; MOLE FRACTIONS; MOLECULAR-BEAM EPITAXIES; NEW APPROACHES; QUANTUM PHYSICS; QUANTUM WELLS; SHORT-PERIOD SUPERLATTICES; TWO-DIMENSIONAL ELECTRON GASSES (2DEG);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 63349085442     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.151     Document Type: Article

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