Tunneling between dilute GaAs hole layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 16, 2008, Pages

  Misra, S ^a   Bishop, N C ^a   Tutuc, E ^a,b   Shayegan, M ^a  

^a Princeton University   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 41549091305     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.161301     Document Type: Article

References (28)

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14. Thanks to a strong spin-orbit coupling in the valence bands, the hole effective mass sensitively depends on both the confinement potential and carrier concentration. R. Pillarisetty (Ph.D. thesis, Princeton University, 2005)
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