Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

  Cao, Helin ^a   Yu, Qingkai ^b   Jauregui, L A ^a   Tian, J ^a   Wu, W ^b   Liu, Z ^b   Jalilian, R ^a   Benjamin, D K ^c   Jiang, Z ^c   Bao, J ^b   Pei, S S ^b   Chen, Yong P ^a  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR FIELD; CHEMICAL VAPOR DEPOSITED; ELECTRONIC TRANSPORT; INTRINSIC ELECTRONICS; LOW TEMPERATURES; MICRO DEVICES; ON/OFF RATIO; PHASE COHERENCE; QUANTUM HALL EFFECT; RAMAN MAPPING; TRANSPORT MEASUREMENTS; WAFER-SCALE; WEAK LOCALIZATION;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COHERENT SCATTERING; ELECTRONIC PROPERTIES; GRAPHENE; GRAPHITE; GYRATORS; HALL EFFECT; HALL EFFECT DEVICES; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

MAGNETIC FIELD EFFECTS;

EID: 77950326206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3371684     Document Type: Article

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