메뉴 건너뛰기




Volumn 5, Issue , 2014, Pages

Strong schottky barrier reduction at au-catalyst/gaas-nanowire interfaces by electric dipole formation and fermi-level unpinning

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84893862090     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms4221     Document Type: Article
Times cited : (56)

References (57)
  • 2
    • 0031245697 scopus 로고    scopus 로고
    • A survey of ohmic contacts to III-V compound semiconductors
    • PII S0040609097004392
    • Baca, A., Ren, F., Zolper, J., Briggs, R. & Pearton, S. A survey of ohmic contacts to III-V compound semiconductors. Thin Solid Films 308, 599-606 (1997). (Pubitemid 127432327)
    • (1997) Thin Solid Films , vol.308-309 , Issue.1-4 , pp. 599-606
    • Baca, A.G.1    Ren, F.2    Zolper, J.C.3    Briggs, R.D.4    Pearton, S.J.5
  • 3
    • 0035834318 scopus 로고    scopus 로고
    • Recent advances in schottky barrier concepts
    • Tung, R. T. Recent advances in Schottky barrier concepts. Mater. Sci. Eng. R Rep. 35, 1-138 (2001).
    • (2001) Mater. Sci. Eng. R Rep. , vol.35 , pp. 1-138
    • Tung, R.T.1
  • 5
    • 0041947020 scopus 로고    scopus 로고
    • Role of Fermi-level pinning in nanotube Schottky diodes
    • Léonard, F. & Tersoff, J. Role of Fermi-level pinning in nanotube Schottky diodes. Phys. Rev. Lett. 84, 4693-4696 (2000).
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 4693-4696
    • Léonard, F.1    Tersoff, J.2
  • 6
    • 2942679446 scopus 로고    scopus 로고
    • Unpinning of Fermi level in nanocrystalline semiconductors
    • Malagù, C., Guidi, V., Carotta, M. C. & Martinelli, G. Unpinning of Fermi level in nanocrystalline semiconductors. Appl. Phys. Lett. 84, 4158-4160 (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 4158-4160
    • Malagù, C.1    Guidi, V.2    Carotta, M.C.3    Martinelli, G.4
  • 7
    • 33749072883 scopus 로고    scopus 로고
    • Size-dependent effects on electrical contacts to nanotubes and nanowires
    • Léonard, F. & Talin, A. A. Size-dependent effects on electrical contacts to nanotubes and nanowires. Phys. Rev. Lett. 97, 026804 (2006).
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 026804
    • Léonard, F.1    Talin, A.A.2
  • 8
    • 83555163728 scopus 로고    scopus 로고
    • Electrical contacts to one-and two-dimensional nanomaterials
    • Léonard, F. & Talin, A. A. Electrical contacts to one-and two-dimensional nanomaterials. Nat. Nanotech. 6, 773-783 (2011).
    • (2011) Nat. Nanotech. , vol.6 , pp. 773-783
    • Léonard, F.1    Talin, A.A.2
  • 9
    • 84875773595 scopus 로고    scopus 로고
    • Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal-semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques
    • Coss, B. E. et al. Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal-semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques. J. Vac. Sci. Technol. B 31, 021202 (2013).
    • (2013) J. Vac. Sci. Technol. B , vol.31 , pp. 021202
    • Coss, B.E.1
  • 10
    • 36148999063 scopus 로고    scopus 로고
    • Mechanisms of current flow in metalsemiconductor ohmic contacts
    • Blank, T. & Gol'Dberg, Y. A. Mechanisms of current flow in metalsemiconductor ohmic contacts. Semiconductors 41, 1263-1292 (2007).
    • (2007) Semiconductors , vol.41 , pp. 1263-1292
    • Blank, T.1    Gol'Dberg, Y.A.2
  • 11
    • 63649160566 scopus 로고    scopus 로고
    • Diameterdependent electronic transport properties of Au-catalyst/Ge- nanowire Schottky diodes
    • Léonard, F., Talin, A. A., Swartzentruber, B. S. & Picraux, S. T. Diameterdependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes. Phys. Rev. Lett. 102, 106805 (2009).
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 106805
    • Léonard, F.1    Talin, A.A.2    Swartzentruber, B.S.3    Picraux, S.T.4
  • 12
    • 72849113399 scopus 로고    scopus 로고
    • Enhanced semiconductor nanocrystal conductance via solution grown contacts
    • Sheldon, M. T., Trudeau, P. E., Mokari, T., Wang, L. W. & Alivisatos, A. P. Enhanced semiconductor nanocrystal conductance via solution grown contacts. Nano Lett. 9, 3676-3682 (2009).
    • (2009) Nano Lett. , vol.9 , pp. 3676-3682
    • Sheldon, M.T.1    Trudeau, P.E.2    Mokari, T.3    Wang, L.W.4    Alivisatos, A.P.5
  • 13
    • 84863707147 scopus 로고    scopus 로고
    • GaAs nanowire Schottky barrier photovoltaics utilizing Au-Ga alloy catalytic tips
    • Han, N. et al. GaAs nanowire Schottky barrier photovoltaics utilizing Au-Ga alloy catalytic tips. Appl. Phys. Lett. 101, 013105 (2012).
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 013105
    • Han, N.1
  • 15
    • 5444245579 scopus 로고    scopus 로고
    • Solid-phase diffusion mechanism for GaAs nanowire growth
    • Persson, A. I. et al. Solid-phase diffusion mechanism for GaAs nanowire growth. Nat. Mater. 3, 677-682 (2004).
    • (2004) Nat. Mater. , vol.3 , pp. 677-682
    • Persson, A.I.1
  • 16
    • 84855732053 scopus 로고    scopus 로고
    • Doping of semiconductor nanowires
    • Wallentin, J. & Borgström, M. T. Doping of semiconductor nanowires. J. Mater. Res. 26, 2142-2156 (2011).
    • (2011) J. Mater. Res. , vol.26 , pp. 2142-2156
    • Wallentin, J.1    Borgström, M.T.2
  • 20
    • 36549100456 scopus 로고
    • A selfconsistent solution of Schrödinger-Poisson equations using a nonuniform mesh
    • Tan, I. H., Snider, G. L., Chang, L. D. & Hu, E. L. A selfconsistent solution of Schrödinger-Poisson equations using a nonuniform mesh. J. Appl. Phys. 68, 4071-4076 (1990).
    • (1990) J. Appl. Phys. , vol.68 , pp. 4071-4076
    • Tan, I.H.1    Snider, G.L.2    Chang, L.D.3    Hu, E.L.4
  • 21
    • 0021422583 scopus 로고
    • Schottky-barrier height of ideal metal contacts to gaas
    • DOI 10.1063/1.94599
    • Waldrop, J. Schottky-barrier height of ideal metal contacts to GaAs. Appl. Phys. Lett. 44, 1002-1004 (1984). (Pubitemid 14607647)
    • (1984) Applied Physics Letters , vol.44 , Issue.10 , pp. 1002-1004
    • Waldrop, J.R.1
  • 22
    • 0001006129 scopus 로고
    • Barrier height studies on metal-semiconductor systems
    • Spitzer, W. G. & Mead, C. A. Barrier height studies on metal-semiconductor systems. J. Appl. Phys. 34, 3061-3069 (1963).
    • (1963) J. Appl. Phys. , vol.34 , pp. 3061-3069
    • Spitzer, W.G.1    Mead, C.A.2
  • 23
    • 0034225107 scopus 로고    scopus 로고
    • Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process
    • Sato, T., Kasai, S., Okada, H. & Hasegawa, H. Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process. Jpn J. Appl. Phys. 39, 4609-4615 (2000).
    • (2000) Jpn J. Appl. Phys. , vol.39 , pp. 4609-4615
    • Sato, T.1    Kasai, S.2    Okada, H.3    Hasegawa, H.4
  • 24
    • 51849102279 scopus 로고    scopus 로고
    • Electrical properties of self-assembled branched InAs nanowire junctions
    • Suyatin, D. B. et al. Electrical properties of self-assembled branched InAs nanowire junctions. Nano Lett. 8, 1100-1104 (2008).
    • (2008) Nano Lett. , vol.8 , pp. 1100-1104
    • Suyatin, D.B.1
  • 25
    • 0000499612 scopus 로고
    • Electron transport of inhomogeneous Schottky barriers: A numerical study
    • Sullivan, J., Tung, R., Pinto, M. & Graham, W. Electron transport of inhomogeneous Schottky barriers: a numerical study. J. Appl. Phys. 70, 7403-7424 (1991).
    • (1991) J. Appl. Phys. , vol.70 , pp. 7403-7424
    • Sullivan, J.1    Tung, R.2    Pinto, M.3    Graham, W.4
  • 26
    • 77957916314 scopus 로고    scopus 로고
    • Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires
    • Jabeen, F. et al. Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires. Nano Res. 3, 706-713 (2010).
    • (2010) Nano Res. , vol.3 , pp. 706-713
    • Jabeen, F.1
  • 27
    • 84863657263 scopus 로고    scopus 로고
    • Controllable p-n switching behaviors of GaAs nanowires via an interface effect
    • Han, N. et al. Controllable p-n switching behaviors of GaAs nanowires via an interface effect. ACS Nano 6, 4428-4433 (2012).
    • (2012) ACS Nano , vol.6 , pp. 4428-4433
    • Han, N.1
  • 28
    • 0019055101 scopus 로고
    • Problems and prospects of compound semiconductor field-effect transistors
    • DOI 10.1116/1.570582
    • Wieder, H. Problems and prospects of compound semiconductor field-effect transistors. J. Vac. Sci. Technol. 17, 1009-1018 (1980). (Pubitemid 11453832)
    • (1980) Journal of vacuum science & technology , vol.17 , Issue.5 , pp. 1009-1018
    • Wieder, H.H.1
  • 29
    • 0141920578 scopus 로고    scopus 로고
    • Single-electron transistors in heterostructure nanowires
    • Thelander, C. et al. Single-electron transistors in heterostructure nanowires. Appl. Phys. Lett. 83, 2052-2054 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 2052-2054
    • Thelander, C.1
  • 30
    • 3242780976 scopus 로고    scopus 로고
    • Electron transport in InAs nanowires and heterostructure nanowire devices
    • Thelander, C. et al. Electron transport in InAs nanowires and heterostructure nanowire devices. Solid State Commun. 131, 573-579 (2004).
    • (2004) Solid State Commun. , vol.131 , pp. 573-579
    • Thelander, C.1
  • 31
    • 0035151969 scopus 로고    scopus 로고
    • Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
    • DOI 10.1016/S0038-1101(00)00230-6
    • Hudait, M., Venkateswarlu, P. & Krupanidhi, S. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. Solid State Electron. 45, 133-141 (2001). (Pubitemid 32093101)
    • (2001) Solid-State Electronics , vol.45 , Issue.1 , pp. 133-141
    • Hudait, M.K.1    Venkateswarlu, P.2    Krupanidhi, S.B.3
  • 33
    • 76649130979 scopus 로고    scopus 로고
    • Transport characterization in nanowires using an electrical nanoprobe
    • Talin, A. A. et al. Transport characterization in nanowires using an electrical nanoprobe. Semicond. Sci. Technol. 25, 024015 (2010).
    • (2010) Semicond. Sci. Technol. , vol.25 , pp. 024015
    • Talin, A.A.1
  • 34
    • 36849123485 scopus 로고
    • Surface states and barrier height of metal-semiconductor systems
    • Cowley, A. & Sze, S. Surface states and barrier height of metal-semiconductor systems. J. Appl. Phys. 36, 3212-3220 (1965).
    • (1965) J. Appl. Phys. , vol.36 , pp. 3212-3220
    • Cowley, A.1    Sze, S.2
  • 36
    • 0017556846 scopus 로고
    • The work function of the elements and its periodicity
    • Michaelson, H. B. The work function of the elements and its periodicity. J. Appl. Phys. 48, 4729-4733 (1977).
    • (1977) J. Appl. Phys. , vol.48 , pp. 4729-4733
    • Michaelson, H.B.1
  • 37
    • 79956033351 scopus 로고    scopus 로고
    • Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs
    • Lodha, S., Janes, D. B. & Chen, N.-P. Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs. Appl. Phys. Lett. 80, 4452-4454 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 4452-4454
    • Lodha, S.1    Janes, D.B.2    Chen, N.-P.3
  • 39
    • 77956326594 scopus 로고    scopus 로고
    • Work function calculation of solid solution alloys using the image force model
    • Rothschild, J. A. & Eizenberg, M. Work function calculation of solid solution alloys using the image force model. Phys. Rev. B 81, 224201 (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 224201
    • Rothschild, J.A.1    Eizenberg, M.2
  • 40
    • 36149025707 scopus 로고
    • Surface states and rectification at a metal semi-conductor contact
    • Bardeen, J. Surface states and rectification at a metal semi-conductor contact. Phys. Rev. 71, 717-727 (1947).
    • (1947) Phys. Rev. , vol.71 , pp. 717-727
    • Bardeen, J.1
  • 41
    • 84862090703 scopus 로고    scopus 로고
    • Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
    • Gurwitz, R. et al. Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure. Appl. Phys. Lett. 100, 191602 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , pp. 191602
    • Gurwitz, R.1
  • 42
    • 84884268020 scopus 로고    scopus 로고
    • Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces
    • Hjort, M. et al. Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces. Nano Lett. 13, 4492-4498 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 4492-4498
    • Hjort, M.1
  • 43
    • 79955991177 scopus 로고    scopus 로고
    • One-dimensional heterostructures in semiconductor nanowhiskers
    • Björk, M. et al. One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 80, 1058-1060 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1058-1060
    • Björk, M.1
  • 44
    • 84944818180 scopus 로고
    • Au-n-Type GaAs Schottky barrier and its varactor application
    • Kahng, D. Au-n-Type GaAs Schottky barrier and its varactor application. Bell Syst. Tech. J. 215-224 (1964).
    • (1964) Bell Syst. Tech. J. , pp. 215-224
    • Kahng, D.1
  • 45
    • 0342955088 scopus 로고    scopus 로고
    • Chemical bonding and Fermi level pinning at metal-semiconductor interfaces
    • Tung, R. T. Chemical bonding and Fermi level pinning at metal-semiconductor interfaces. Phys. Rev. Lett. 84, 6078-6081 (2000).
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 6078-6081
    • Tung, R.T.1
  • 46
    • 84867452048 scopus 로고    scopus 로고
    • Band bending in semiconductors: Chemical and physical consequences at surfaces and interfaces
    • Zhang, Z. & Yates, Jr J. T. Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces. Chem. Rev. 112, 5520-5551 (2012).
    • (2012) Chem. Rev. , vol.112 , pp. 5520-5551
    • Zhang, Z.1    Yates Jr., J.T.2
  • 47
    • 84869089839 scopus 로고    scopus 로고
    • Spatially resolved Hall effect measurement in a single semiconductor nanowire
    • Storm, K. et al. Spatially resolved Hall effect measurement in a single semiconductor nanowire. Nat. Nanotech. 7, 718-722 (2012).
    • (2012) Nat. Nanotech. , vol.7 , pp. 718-722
    • Storm, K.1
  • 49
    • 33344478702 scopus 로고    scopus 로고
    • Spin relaxation in InAs nanowires studied by tunable weak antilocalization
    • Hansen, A. E., Björk, M. T., Fasth, C., Thelander, C. & Samuelson, L. Spin relaxation in InAs nanowires studied by tunable weak antilocalization. Phys. Rev. B 71, 205328 (2005).
    • (2005) Phys. Rev. B , vol.71 , pp. 205328
    • Hansen, A.E.1    Björk, M.T.2    Fasth, C.3    Thelander, C.4    Samuelson, L.5
  • 50
    • 77958027591 scopus 로고    scopus 로고
    • New flexible toolbox for nanomechanical measurements with extreme precision and at very high frequencies
    • Fian, A. et al. New flexible toolbox for nanomechanical measurements with extreme precision and at very high frequencies. Nano Lett. 10, 3893-3898 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 3893-3898
    • Fian, A.1
  • 52
    • 0000766947 scopus 로고
    • Current transport in metal-semiconductor barriers
    • Crowell, C. & Sze, S. Current transport in metal-semiconductor barriers. Solid State Electron. 9, 1035-1048 (1966).
    • (1966) Solid State Electron. , vol.9 , pp. 1035-1048
    • Crowell, C.1    Sze, S.2
  • 54
    • 3643113945 scopus 로고
    • On the Richardson constant of intimate metal-GaAs (111)B Schottky diodes grown by molecular beam epitaxy
    • Pilkington, S. J., Missous, M. & Woolf, D. A. On the Richardson constant of intimate metal-GaAs (111)B Schottky diodes grown by molecular beam epitaxy. J. Appl. Phys. 74, 6256-6260 (1993).
    • (1993) J. Appl. Phys. , vol.74 , pp. 6256-6260
    • Pilkington, S.J.1    Missous, M.2    Woolf, D.A.3
  • 56
    • 35949029918 scopus 로고
    • Ionicity of the chemical bond in crystals
    • Phillips, J. C. Ionicity of the chemical bond in crystals. Rev. Mod. Phys. 42, 317-356 (1970).
    • (1970) Rev. Mod. Phys. , vol.42 , pp. 317-356
    • Phillips, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.