Electrical properties of self-assembled branched inas nanowire junctions

Nano Letters

Volumn 8, Issue 4, 2008, Pages 1100-1104

  Suyatin, Dmitry B ^a   Sun, Jie ^a   Fuhrer, Andreas ^a   Wallin, Daniel ^a   Fröberg, Linus E ^a   Karlsson, Lisa S ^b   Maximov, Ivan ^a   Wallenberg, L Reine ^b   Samuelson, Lars ^a   Xu, H Q ^a  

^a LUND UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; ELECTRIC PROPERTIES; INDIUM ARSENIDE; INTEGRATED CIRCUIT LAYOUT; NANOELECTRONICS; NANOWIRES; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS;

BALLISTIC ELECTRON TRANSPORTS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; ELECTRICAL SIGNALS; ELECTRON-BEAM LITHOGRAPHIES; FREQUENCY MIXING; INAS; NANO-ELECTRONIC DEVICES; NANOWIRE JUNCTIONS; PHASE DIFFERENCES; POTENTIAL APPLICATIONS; ROOM TEMPERATURES; SELF-ASSEMBLED; SELF-ASSEMBLED NANOWIRES; SEMICONDUCTOR NANOSTRUCTURES;

ELECTRIC WIRE;

EID: 51849102279     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl073193y     Document Type: Article

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