Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4452-4454

  Lodha, Saurabh ^a   Janes, David B ^a   Chen, Nien Po ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; AS-GROWN; CAPPED LAYER; CONTROL SAMPLES; DEFECT STATE; EX SITU; FERMI-LEVEL UNPINNING; GAAS; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; INTERFACE BARRIER; LAYER STRUCTURES; LOW-TEMPERATURE-GROWN GAAS; METAL WORK FUNCTION; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS;

FERMI LEVEL; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; WORK FUNCTION;

SEMICONDUCTING GALLIUM;

EID: 79956033351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484243     Document Type: Article

References (18)

1. C. A. Mead and W. G. Spitzer, J. Appl. Phys. 34, 3061 (1963). jap JAPIAU 0021-8979
2. M. R. Melloch, J. M. Woodall, E. S. Harmon, N. Otsuka, F. H. Pollak, D. D. Nolte, R. M. Feenstra, and M. A. Lutz, Annu. Rev. Mater. Sci. 25, 547 (1995). arm ARMSCX 0084-6600
3. R. M. Feenstra, J. M. Woodall, and G. D. Petit, Phys. Rev. Lett. 71, 1176 (1993). prl PRLTAO 0031-9007
4. R. M. Feenstra, A. Vaterlaus, J. M. Woodall, and G. D. Petit, Appl. Phys. Lett. 63, 2528 (1993). apl APPLAB 0003-6951
5. S. Hong, R. Reifenberger, D. B. Janes, D. McInturff, and J. M. Woodall, Appl. Phys. Lett. 68, 2558 (1996). apl APPLAB 0003-6951
6. R. M. Feenstra, J. M. Woodall, and G. D. Petit, Mater. Sci. Forum 143, 1311 (1994). msf MSFOEP 0255-5476
7. T.-B. Ng, D. B. Janes, D. McInturff, and J. M. Woodall, Appl. Phys. Lett. 69, 3551 (1996). apl APPLAB 0003-6951
8. S. Howell, Ph.D. thesis, Purdue University, West Lafayette, IN, 2001.
9. M. P. Patkar, T. P. Chin, J. M. Woodall, M. S. Lundstrom, and M. R. Melloch, Appl. Phys. Lett. 66, 1412 (1995). apl APPLAB 0003-6951
10. N.-P. Chen, H. J. Ueng, D. B. Janes, J. M. Woodall, and M. R. Melloch, J. Appl. Phys. 88, 309 (2000). jap JAPIAU 0021-8979
11. N.-P. Chen, Ph.D. thesis, Purdue University, West Lafayette, IN, 2001.
12. T. Lee, N.-P. Chen, J. Liu, R. P. Andres, D. B. Janes, E. H. Chen, M. R. Melloch, J. M. Woodall, and R. Reifenberger, Appl. Phys. Lett. 76, 212 (2000). apl APPLAB 0003-6951
13. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Oxford University Press, New York, 1988).
14. S. Lodha, D. B. Janes, N.-P. Chen, and E. H. Chen (unpublished).
15. J. Bardeen, Phys. Rev. 71, 717 (1947). phr PHRVAO 0031-899X
16. J. Tersoff, in Proceedings of a NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces, edited by I. P. Batra (Plenum, New York, 1989), pp. 281-288.
17. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). prl PRLTAO 0031-9007
18. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 44, 420 (1984). prl PRLTAO 0031-9007