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Volumn 100, Issue 19, 2012, Pages

Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure

(7) Gurwitz, Ron a Tavor, Asa a Karpeles, Liran a Shalish, Ilan a Yi, Wei b,c Seryogin, Georgiy b,d Narayanamurti, Venkatesh b

a BEN GURION UNIVERSITY OF THE NEGEV (Israel)

b HARVARD UNIVERSITY (United States)

c HEWLETT PACKARD LABORATORIES (United States)

d Nexx Systems (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISCONTINUITIES; GAAS; GAAS SUBSTRATES; HEXAGONAL SHAPES; POLYTYPES; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPE; SURFACE PHOTOVOLTAGE SPECTROSCOPY; SURFACE PHOTOVOLTAGE SPECTRUM; SURFACE PITS; TYPE II; WURTZITE PHASE; WURTZITE STRUCTURE; WURTZITES; ZINC-BLENDE;

ENERGY GAP; EPILAYERS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE PROPERTIES; X RAY DIFFRACTION;

ZINC SULFIDE;

EID: 84862090703 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4712562 Document Type: Article

Times cited : (27)

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