Transport characterization in nanowires using an electrical nanoprobe

Semiconductor Science and Technology

Volumn 25, Issue 2, 2010, Pages

  Talin, A A ^a   Leonard F ^b   Katzenmeyer, A M ^b   Swartzentruber, B S ^c   Picraux, S T ^d   Toimil Molares, M E ^a,f   Cederberg, J G ^c   Wang, X ^e   Hersee, S D ^e   Rishinaramangalum, A ^e  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

^e University of New Mexico   (United States)

^f GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AU CATALYSTS; CARRIER INJECTION; CARRIER RECOMBINATION; CATALYST-FREE; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT TRANSITION; FABRICATION EQUIPMENT; FREE CARRIER CONCENTRATION; GAN NANOWIRES; GROWTH SUBSTRATES; HIGH ASPECT RATIO; INAS; LABOR INTENSIVE; LOW BIAS; NANO MANIPULATOR; NANOWIRE SURFACE; OHMIC CONDUCTION; SCANNING ELECTRON MICROSCOPE; SCHOTTKY CONTACTS; SELECTIVE EPITAXY; SEMICONDUCTOR NANOWIRE; SIMPLE METHOD; SPACE-CHARGE-LIMITED; TOP GATE; VAPOR-SOLID;

ASPECT RATIO; CARRIER CONCENTRATION; CARRIER MOBILITY; CATALYSIS; CATALYSTS; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GERMANIUM; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH;

ELECTRIC WIRE;

EID: 76649130979     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/2/024015     Document Type: Article

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