GaAs nanowire Schottky barrier photovoltaics utilizing Au-Ga alloy catalytic tips

Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

  Han, Ning ^a   Wang, Fengyun ^a   Yip, Senpo ^a   Hou, Jared J ^a   Xiu, Fei ^a   Shi, Xiaoling ^a   Hui, Alvin T ^a   Hung, Takfu ^a   Ho, Johnny C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MASS; CONTACT INTERFACE; CURRENT-VOLTAGE MEASUREMENTS; DEVICE APPLICATION; FERMI LEVEL PINNING; GAAS; GLOBAL ILLUMINATION; METAL CONTACTS; NANO SCALE; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC RESPONSE; PHOTOVOLTAICS; SCHOTTKY BARRIERS;

CONVERSION EFFICIENCY; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

NANOWIRES;

EID: 84863707147     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4727907     Document Type: Article

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