Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Harada, Naoki ^a   Sato, Shintaro ^a   Yokoyama, Naoki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATION THEORY; CONDUCTION BANDS; ELECTRIC FIELD EFFECTS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; TENSILE STRAIN; TRANSITION METALS; TUNGSTEN COMPOUNDS;

ARTIFICIAL STRAINS; COMPUTATIONAL STUDIES; CONDUCTION-BAND MINIMUM; ELECTRON EFFECTIVE MASS; FIELD EFFECT TRANSISTOR (FETS); FIRST-PRINCIPLE THEORY; TRANSITION METAL DICHALCOGENIDES; VALENCE-BAND MAXIMUMS;

FIELD EFFECT TRANSISTORS;

EID: 84893320022     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861726     Document Type: Article

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