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Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

(1) Jiménez, David a

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; DENSITY-OF-STATES; DEVICE DESIGN; DRIFT DIFFUSION; DRIFT-DIFFUSION MODEL; LOW POWER APPLICATION; PHYSICS-BASED MODELS; QUANTUM CAPACITANCE; SINGLE LAYER; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS; MONOLAYERS; QUANTUM THEORY; SURFACE POTENTIAL;

TRANSITION METALS;

EID: 84871347786 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4770313 Document Type: Article

Times cited : (98)

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