-
2
-
-
0001473741
-
AlGaN/GaN HEMTs - An overview of device operation and applications
-
DOI 10.1109/JPROC.2002.1021567, PII S0018921902055822
-
U. K. Mishra, P. Parikh, and Y. F. Wu, Proc. IEEE 90, 1022 (2002). IEEPAD 0018-9219 10.1109/JPROC.2002.1021567 (Pubitemid 43779259)
-
(2002)
Proceedings of the IEEE
, vol.90
, Issue.6
, pp. 1022-1031
-
-
Mishra, U.K.1
Parikh, P.2
Wu, Y.-F.3
-
3
-
-
10044281871
-
-
3, 5870. JAPIAU 0021-8979 10.1063/1.1801159
-
M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, and Z. Sitar, J. Appl. Phys. 96, 5870 (2004). JAPIAU 0021-8979 10.1063/1.1801159
-
(2004)
J. Appl. Phys.
, vol.96
-
-
Strassburg, M.1
Senawiratne, J.2
Dietz, N.3
Haboeck, U.4
Hoffmann, A.5
Noveski, V.6
Dalmau, R.7
Schlesser, R.8
Sitar, Z.9
-
4
-
-
31544471838
-
Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films
-
DOI 10.1143/JJAP.44.7227
-
St. Keller, P. Cantu, C. Moe, Y. Wu, Sa. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys. 44, 7227 (2005). JAPLD8 0021-4922 10.1143/JJAP.44.7227 (Pubitemid 43160503)
-
(2005)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.44
, Issue.10
, pp. 7227-7233
-
-
Keller, S.1
Cantu, P.2
Moe, C.3
Yuan, W.U.4
Keller, S.5
Mishra, U.K.6
Speck, J.S.7
Denbaars, S.P.8
-
5
-
-
32644432560
-
Compositional and structural characterization of indium nitride using swift ions
-
DOI 10.1016/j.jcrysgro.2005.12.004, PII S0022024805014557
-
H. Timmers, K. S. A. Butcher, S. K. Shrestha, P. P.-T. Chen, M. Wintrebert-Fouquet, and R. Dogra, J. Cryst. Growth 288, 236 (2006). JCRGAE 0022-0248 10.1016/j.jcrysgro.2005.12.004 (Pubitemid 43243843)
-
(2006)
Journal of Crystal Growth
, vol.288
, Issue.2
, pp. 236-240
-
-
Timmers, H.1
Butcher, K.S.A.2
Shrestha, S.K.3
Chen, P.P.-T.4
Wintrebert-Fouquet, M.5
Dogra, R.6
-
6
-
-
3242723280
-
-
6, 1145. JVTBD9 0734-211X 10.1116/1.1752907
-
C. Poblenz, P. Waltereit, S. Rajan, S. Heikman, U. K. Mishra, and J. S. Speck, J. Vac. Sci. Technol. B 22, 1145 (2004). JVTBD9 0734-211X 10.1116/1.1752907
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
-
-
Poblenz, C.1
Waltereit, P.2
Rajan, S.3
Heikman, S.4
Mishra, U.K.5
Speck, J.S.6
-
7
-
-
1242265229
-
-
7, 374. APPLAB 0003-6951 10.1063/1.1643540
-
A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 84, 374 (2004). APPLAB 0003-6951 10.1063/1.1643540
-
(2004)
Appl. Phys. Lett.
, vol.84
-
-
Armstrong, A.1
Arehart, A.R.2
Moran, B.3
Denbaars, S.P.4
Mishra, U.K.5
Speck, J.S.6
Ringel, S.A.7
-
8
-
-
84871723340
-
-
8, 262102. APPLAB 0003-6951 10.1063/1.4773510
-
S. W. Kaun, P. G. Burke, M. H. Wong, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 101, 262102 (2012). APPLAB 0003-6951 10.1063/1.4773510
-
(2012)
Appl. Phys. Lett.
, vol.101
-
-
Kaun, S.W.1
Burke, P.G.2
Wong, M.H.3
Kyle, E.C.H.4
Mishra, U.K.5
Speck, J.S.6
-
9
-
-
0036733962
-
Substitutional and interstitial carbon in wurtzite GaN
-
DOI 10.1063/1.1498879
-
A. F. Wright, J. Appl. Phys. 92, 2575 (2002). JAPIAU 0021-8979 10.1063/1.1498879 (Pubitemid 35037861)
-
(2002)
Journal of Applied Physics
, vol.92
, Issue.5
, pp. 2575
-
-
Wright, A.F.1
-
11
-
-
84893144101
-
-
11, G3.67.
-
E. E. Reuter, R. Zhang, T. F. Kuech, and S. G. Bishop, MRS Internet J. Nitride Semicond. Res. 4S1, G3.67 (1999).
-
(1999)
MRS Internet J. Nitride Semicond. Res.
, vol.41
-
-
Reuter, E.E.1
Zhang, R.2
Kuech, T.F.3
Bishop, S.G.4
-
12
-
-
0019284819
-
-
12, 2395. JAPLD8 0021-4922 10.1143/JJAP.19.2395
-
T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980). JAPLD8 0021-4922 10.1143/JJAP.19.2395
-
(1980)
Jpn. J. Appl. Phys.
, vol.19
-
-
Ogino, T.1
Aoki, M.2
-
13
-
-
0036906374
-
-
13, 6553. JAPIAU 0021-8979 10.1063/1.1518794
-
C. H. Seager, A. F. Wright, J. Yu, and W. Götz, J. Appl. Phys. 92, 6553 (2002). JAPIAU 0021-8979 10.1063/1.1518794
-
(2002)
J. Appl. Phys.
, vol.92
-
-
Seager, C.H.1
Wright, A.F.2
Yu, J.3
Götz, W.4
-
14
-
-
77956786019
-
-
14, (Academic, New York)
-
B. K. Meyer, Semiconductors and Semimetals (Academic, New York, 1999), Vol. 57, pp. 371-406.
-
(1999)
Semiconductors and Semimetals
, vol.57
, pp. 371-406
-
-
Meyer, B.K.1
-
16
-
-
17544382665
-
Analysis of the carbon-related "blue" luminescence in GaN
-
DOI 10.1063/1.1856224, 073524
-
R. Armitage, Q. Yang, and E. R. Weber, J. Appl. Phys. 97, 073524 (2005). JAPIAU 0021-8979 10.1063/1.1856224 (Pubitemid 40552501)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.7
, pp. 1-9
-
-
Armitage, R.1
Yang, Q.2
Weber, E.R.3
-
17
-
-
0842269142
-
-
17, 115. JLUMA8 0022-2313 10.1016/j.jlumin.2003.08.004
-
C. H. Seager, D. R. Tallant, J. Yu, and W. Götz, J. Lumin. 106, 115 (2004). JLUMA8 0022-2313 10.1016/j.jlumin.2003.08.004
-
(2004)
J. Lumin.
, vol.106
-
-
Seager, C.H.1
Tallant, D.R.2
Yu, J.3
Götz, W.4
-
18
-
-
0142084261
-
Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition
-
DOI 10.1063/1.121039, PII S0003695198039126
-
X. Tang, F. Hossain, K. Wongchotigul, and M. G. Spencer, Appl. Phys. Lett. 72, 1501 (1998). APPLAB 0003-6951 10.1063/1.121039 (Pubitemid 128671292)
-
(1998)
Applied Physics Letters
, vol.72
, Issue.12
, pp. 1501-1503
-
-
Tang, X.1
Hossain, F.2
Wongchotigul, K.3
Spencer, M.G.4
-
19
-
-
84862095056
-
-
19, 191914. APPLAB 0003-6951 10.1063/1.4717623
-
R. Collazo, J. Xie, B. E. Gaddy, Z. Bryan, R. Kirste, M. Hoffmann, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, D. L. Irving, and Z. Sitar, Appl. Phys. Lett. 100, 191914 (2012). APPLAB 0003-6951 10.1063/1.4717623
-
(2012)
Appl. Phys. Lett.
, vol.100
-
-
Collazo, R.1
Xie, J.2
Gaddy, B.E.3
Bryan, Z.4
Kirste, R.5
Hoffmann, M.6
Dalmau, R.7
Moody, B.8
Kumagai, Y.9
Nagashima, T.10
Kubota, Y.11
Kinoshita, T.12
Koukitu, A.13
Irving, D.L.14
Sitar, Z.15
-
20
-
-
67651251402
-
-
20, 032106. APPLAB 0003-6951 10.1063/1.3154518
-
B. Bastek, F. Bertram, J. Christen, T. Hempel, A. Dadgar, and A. Krost, Appl. Phys. Lett. 95, 032106 (2009). APPLAB 0003-6951 10.1063/1.3154518
-
(2009)
Appl. Phys. Lett.
, vol.95
-
-
Bastek, B.1
Bertram, F.2
Christen, J.3
Hempel, T.4
Dadgar, A.5
Krost, A.6
-
21
-
-
0037121725
-
Some effects of oxygen impurities on AlN and GaN
-
DOI 10.1016/S0022-0248(02)01753-0, PII S0022024802017530
-
G. A. Slack, L. J. Schowalter, D. Morelli, and J. A. Freitas, Jr., J. Cryst. Growth 246, 287 (2002). JCRGAE 0022-0248 10.1016/S0022-0248(02)01753-0 (Pubitemid 35390213)
-
(2002)
Journal of Crystal Growth
, vol.246
, Issue.3-4
, pp. 287-298
-
-
Slack, G.A.1
Schowalter, L.J.2
Morelli, D.3
Freitas Jr., J.A.4
-
22
-
-
84872831545
-
-
22, 033501. JAPIAU 0021-8979 10.1063/1.4775736
-
M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Pezoldt, P. Schley, E. Sakalauskas, R. Goldhan, R. Félix, J. M. Mánuel, F. M. Morales, D. Carvalho, T. Ben, R. García, and G. Koblmüller, J. Appl. Phys. 113, 033501 (2013). JAPIAU 0021-8979 10.1063/1.4775736
-
(2013)
J. Appl. Phys.
, vol.113
-
-
Himmerlich, M.1
Knübel, A.2
Aidam, R.3
Kirste, L.4
Eisenhardt, A.5
Krischok, S.6
Pezoldt, J.7
Schley, P.8
Sakalauskas, E.9
Goldhan, R.10
Félix, R.11
Mánuel, J.M.12
Morales, F.M.13
Carvalho, D.14
Ben, T.15
García, R.16
Koblmüller, G.17
-
23
-
-
0036925275
-
Carbon-based defects in GaN: Doping behaviour
-
DOI 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X
-
L. E. Ramos, J. Furthmüller, J. R. Leite, L. M. R. Scolfaro, and F. Bechstedt, Phys. Status Solidi B 234, 864 (2002). PSSBBD 0370-1972 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X (Pubitemid 36027913)
-
(2002)
Physica Status Solidi (B) Basic Research
, vol.234
, Issue.3
, pp. 864-867
-
-
Ramos, L.E.1
Furthmuller, J.2
Leite, J.R.3
Scolfaro, L.M.R.4
Bechstedt, F.5
-
24
-
-
34848849307
-
Shallow acceptors in GaN
-
DOI 10.1063/1.2776852
-
T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. Briddon, Appl. Phys. Lett. 91, 132105 (2007). APPLAB 0003-6951 10.1063/1.2776852 (Pubitemid 47502565)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.13
, pp. 132105
-
-
Eberlein, T.A.G.1
Jones, R.2
Oberg, S.3
Briddon, P.R.4
-
25
-
-
60449089329
-
-
25, 035207. PRBMDO 1098-0121 10.1103/PhysRevB.79.035207
-
X. M. Duan and C. Stampfl, Phys. Rev. B 79, 035207 (2009). PRBMDO 1098-0121 10.1103/PhysRevB.79.035207
-
(2009)
Phys. Rev. B
, vol.79
-
-
Duan, X.M.1
Stampfl, C.2
-
26
-
-
0141546306
-
-
26, 9496. PRBMDO 0163-1829 10.1103/PhysRevB.56.9496
-
P. Bogusławski and J. Bernholc, Phys. Rev. B 56, 9496 (1997). PRBMDO 0163-1829 10.1103/PhysRevB.56.9496
-
(1997)
Phys. Rev. B
, vol.56
-
-
Bogusławski, P.1
Bernholc, J.2
-
30
-
-
84874772606
-
-
30, 199. 10.1002/pssr.201206464
-
A. Janotti, C. Franchini, J. B. Varley, G. Kresse, and C. G. Van de Walle, Phys. Status Solidi RRL 7, 199 (2013). 10.1002/pssr.201206464
-
(2013)
Phys. Status Solidi RRL
, vol.7
-
-
Janotti, A.1
Franchini, C.2
Varley, J.B.3
Kresse, G.4
Walle De Van, C.G.5
-
31
-
-
77958036902
-
-
31, 142106. APPLAB 0003-6951 10.1063/1.3499306
-
J. B. Varley, J. R. Weber, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. 97, 142106 (2010). APPLAB 0003-6951 10.1063/1.3499306
-
(2010)
Appl. Phys. Lett.
, vol.97
-
-
Varley, J.B.1
Weber, J.R.2
Janotti, A.3
Walle De Van, C.G.4
-
33
-
-
77952985638
-
-
33, 192110. APPLAB 0003-6951 10.1063/1.3429086
-
Á. Szabó, N. T. Son, E. Janzén, and A. Gali, Appl. Phys. Lett. 96, 192110 (2010). APPLAB 0003-6951 10.1063/1.3429086
-
(2010)
Appl. Phys. Lett.
, vol.96
-
-
Szabó, A.1
Son, N.T.2
Janzén, E.3
Gali, A.4
-
34
-
-
4243373450
-
-
34, 873. PRLTAO 0031-9007 10.1103/PhysRevLett.61.873
-
D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988). PRLTAO 0031-9007 10.1103/PhysRevLett.61.873
-
(1988)
Phys. Rev. Lett.
, vol.61
-
-
Chadi, D.J.1
Chang, K.J.2
-
35
-
-
36449000544
-
-
35, 3589. APPLAB 0003-6951 10.1063/1.105641
-
D. J. Chadi, Appl. Phys. Lett. 59, 3589 (1991). APPLAB 0003-6951 10.1063/1.105641
-
(1991)
Appl. Phys. Lett.
, vol.59
-
-
Chadi, D.J.1
-
36
-
-
0042113153
-
-
36, A1133. PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
-
W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
-
(1965)
Phys. Rev.
, vol.140
-
-
Kohn, W.1
Sham, L.J.2
-
38
-
-
2442537377
-
-
38, 11169. PRBMDO 0163-1829 10.1103/PhysRevB.54.11169
-
G. Kresse and J. Furthmüller, Phys. Rev. B. 54, 11169 (1996). PRBMDO 0163-1829 10.1103/PhysRevB.54.11169
-
(1996)
Phys. Rev. B.
, vol.54
-
-
Kresse, G.1
Furthmüller, J.2
-
39
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
DOI 10.1016/0927-0256(96)00008-0, PII S0927025696000080
-
G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996). CMMSEM 0927-0256 10.1016/0927-0256(96)00008-0 (Pubitemid 126412269)
-
(1996)
Computational Materials Science
, vol.6
, Issue.1
, pp. 15-50
-
-
Kresse, G.1
Furthmuller, J.2
-
41
-
-
84893033805
-
-
41, 2nd revised ed., edited by (Springer, Berlin)
-
Semiconductors-Basic Data, 2nd revised ed., edited by O. Madelung (Springer, Berlin, 1996).
-
(1996)
Semiconductors-Basic Data
-
-
Madelung, O.1
-
42
-
-
25744460922
-
-
42, 17953. PRBMDO 0163-1829 10.1103/PhysRevB.50.17953
-
P. E. Blöchl, Phys. Rev. B 50, 17953 (1994). PRBMDO 0163-1829 10.1103/PhysRevB.50.17953
-
(1994)
Phys. Rev. B
, vol.50
-
-
Blöchl, P.E.1
-
43
-
-
0011236321
-
-
43, 1758. PRBMDO 1098-0121 10.1103/PhysRevB.59.1758
-
G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). PRBMDO 1098-0121 10.1103/PhysRevB.59.1758
-
(1999)
Phys. Rev. B
, vol.59
-
-
Kresse, G.1
Joubert, D.2
-
47
-
-
84871797440
-
-
47, 267401. PRLTAO 0031-9007 10.1103/PhysRevLett.109.267401
-
A. Alkauskas, J. L. Lyons, D. Steiauf, and C. G. Van de Walle, Phys. Rev. Lett. 109, 267401 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.109.267401
-
(2012)
Phys. Rev. Lett.
, vol.109
-
-
Alkauskas, A.1
Lyons, J.L.2
Steiauf, D.3
Walle De Van, C.G.4
-
48
-
-
77954317735
-
-
48, 263512. APPLAB 0003-6951 10.1063/1.3459968
-
G. Meneghesso, F. Rossi, G. Salviati, M. J. Uren, E. Muñoz, and E. Zanoni, Appl. Phys. Lett. 96, 263512 (2010). APPLAB 0003-6951 10.1063/1.3459968
-
(2010)
Appl. Phys. Lett.
, vol.96
-
-
Meneghesso, G.1
Rossi, F.2
Salviati, G.3
Uren, M.J.4
Muñoz, E.5
Zanoni, E.6
-
49
-
-
0035914883
-
-
49, 3527. APPLAB 0003-6951 10.1063/1.1418452
-
P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett. 79, 3527 (2001). APPLAB 0003-6951 10.1063/1.1418452
-
(2001)
Appl. Phys. Lett.
, vol.79
-
-
Klein, P.B.1
Binari, S.C.2
Ikossi, K.3
Wickenden, A.E.4
Koleske, D.D.5
Henry, R.L.6
-
50
-
-
84866100322
-
-
50, 121. SSELA5 0038-1101 10.1016/j.sse.2012.05.057
-
P. B. Shah, R. H. Dedhia, R. P. Tompkins, E. A. Viveiros, and K. A. Jones, Solid-State Electron. 78, 121 (2012). SSELA5 0038-1101 10.1016/j.sse.2012.05.057
-
(2012)
Solid-State Electron.
, vol.78
-
-
Shah, P.B.1
Dedhia, R.H.2
Tompkins, R.P.3
Viveiros, E.A.4
Jones, K.A.5
-
51
-
-
25144489522
-
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
-
DOI 10.1063/1.2005379, 053704
-
A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck, and S. A. Ringel, J. Appl. Phys. 98, 053704 (2005). JAPIAU 0021-8979 10.1063/1.2005379 (Pubitemid 41345092)
-
(2005)
Journal of Applied Physics
, vol.98
, Issue.5
, pp. 1-11
-
-
Armstrong, A.1
Arehart, A.R.2
Green, D.3
Mishra, U.K.4
Speck, J.S.5
Ringel, S.A.6
-
52
-
-
84893036745
-
-
52, 04DF04. JAPLD8 0021-4922 10.7567/JJAP.51.04DF04
-
U. Honda, Y. Yamada, Y. Tokuda, and K. Shiojima, Jpn. J. Appl. Phys. 51, 04DF04 (2012). JAPLD8 0021-4922 10.7567/JJAP.51.04DF04
-
(2012)
Jpn. J. Appl. Phys.
, vol.51
-
-
Honda, U.1
Yamada, Y.2
Tokuda, Y.3
Shiojima, K.4
-
54
-
-
0041601160
-
Role of hydrogen in doping of GaN
-
DOI 10.1063/1.116027, PII S0003695196027131
-
J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996). APPLAB 0003-6951 10.1063/1.116027 (Pubitemid 126688399)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.13
, pp. 1829-1831
-
-
Neugebauer, J.1
Van De Walle, C.G.2
-
55
-
-
84871296478
-
-
55, 125501. 1882-0778 10.1143/APEX.5.125501
-
T. Nagashima, Y. Kubota, T. Kinoshita, Y. Kumagai, J. Xie, R. Collazo, H. Murakami, H. Okamoto, A. Koukitu, and Z. Sitar, Appl. Phys. Exp. 5, 125501 (2012). 1882-0778 10.1143/APEX.5.125501
-
(2012)
Appl. Phys. Exp.
, vol.5
-
-
Nagashima, T.1
Kubota, Y.2
Kinoshita, T.3
Kumagai, Y.4
Xie, J.5
Collazo, R.6
Murakami, H.7
Okamoto, H.8
Koukitu, A.9
Sitar, Z.10
-
56
-
-
0038172513
-
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
-
DOI 10.1038/nature01665
-
C. G. Van de Walle and J. Neugebauer, Nature (London) 423, 626 (2003). NATUAS 0028-0836 10.1038/nature01665 (Pubitemid 36713219)
-
(2003)
Nature
, vol.423
, Issue.6940
, pp. 626-628
-
-
Van De Walle, C.G.1
Neugebauer, J.2
-
57
-
-
20844433188
-
Substitutional diatomic molecules NO, NC, CO, N2, and O2: Their vibrational frequencies and effects on p doping of ZnO
-
DOI 10.1063/1.1931823, 211910
-
S. Limpijumnong, X. Li, S. H. Wei, and S. B. Zhang, Appl. Phys. Lett. 86, 211910 (2005). APPLAB 0003-6951 10.1063/1.1931823 (Pubitemid 40861510)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.21
, pp. 1-3
-
-
Limpijumnong, S.1
Li, X.2
Wei, S.-H.3
Zhang, S.B.4
-
58
-
-
35148897661
-
-
58, 165202. PRBMDO 1098-0121 10.1103/PhysRevB.76.165202
-
A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 (2007). PRBMDO 1098-0121 10.1103/PhysRevB.76.165202
-
(2007)
Phys. Rev. B
, vol.76
-
-
Janotti, A.1
Walle De Van, C.G.2
-
59
-
-
0000030245
-
-
59, 3297. APPLAB 0003-6951 10.1063/1.125330
-
V. Y. Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297 (1999). APPLAB 0003-6951 10.1063/1.125330
-
(1999)
Appl. Phys. Lett.
, vol.75
-
-
Davydov, V.Y.1
Emtsev, V.V.2
Goncharuk, I.N.3
Smirnov, A.N.4
Petrikov, V.D.5
Mamutin, V.V.6
Vekshin, V.A.7
Ivanov, S.V.8
Smirnov, M.B.9
Inushima, T.10
|