Carbon-based defects in GaN: Doping behaviour

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 864-867

  Ramos, L E ^a,b   Furthmuller J ^b   Leite, J R ^a   Scolfaro, L M R ^a   Bechstedt, F ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036925275     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X     Document Type: Conference Paper

References (13)

1. S. Shimizu and S. Sonoda, Proc. Internat. Workshop Nitride Semicond., IPAP Conf. Series 1, 740 (2000).
2. D.J. As, phys. stat. sol. (b) 210, 445 (1998).
3. C.R. Abernathy, J.D. Mackenzie, and S.J. Pearton, Appl. Phys. Lett. 66, 1969 (1995).
4. D.J. As and U. Köhler, J. Phys.: Condens. Matter 13, 8923 (2001).
5. T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980).
6. J. Neugebauer and C.G. Van De Walle, Adv. Solid State Phys. 35, 25 (1996).
7. P. Bogusławski and J. Bernholc, Phys. Rev. B 56, 9496 (1997).
8. P. Bogusławski, E.L. Briggs, and J. Bernholc, Appl. Phys. Lett. 69, 233 (1996).
9. L.E. Ramos, J. Furthmüller, F. Bechstedt, L.M.R. Scolfaro, and J.R. Leite, J. Phys.: Condens. Matter. 14, 2577 (2002).
10. M. Marques, L.E. Ramos, L.M.R. Scolfaro, L.K. Teles, and J.R. Leite, Proc. 25th Internat. Conf. Phys. Semicond., Osaka 2000, Eds. N. Miura and T. Ando, Springer-Verlag, Berlin 2001 (p. 1411).
11. L.E. Ramos, J. Furthmüller, L.M.R. Scolfaro, J.R. Leite, and F. Bechstedt, Phys. Rev. B (2002), accepted.
12. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
13. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).