Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

  Bastek, Barbara ^a   Bertram, Frank ^a   Christen, Juergen ^a   Hempel, Thomas ^a   Dadgar, Armin ^a,b   Krost, Alois ^a,b  

^a Institute of Experimental Physics   (Germany)

^b AZZURRO Semiconductors AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CATHODOLUMINESCENCE SPECTROSCOPY; DEEP DEFECTS; GROWTH CONDITIONS; N VACANCY; TEMPERATURE DEPENDENT; THERMAL ACTIVATION;

CATHODOLUMINESCENCE; DEFECTS; OXYGEN; POINT DEFECTS;

LIGHT EMISSION;

EID: 67651251402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3154518     Document Type: Article

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