Structural and optical properties of carbon-doped aln substrates grown by hydride vapor phase epitaxy using aln substrates prepared by physical vapor transport

Applied Physics Express

Volumn 5, Issue 12, 2012, Pages

  Nagashima, Toru ^a,b   Kubota, Yuki ^a   Kinoshita, Toru ^a   Kumagai, Yoshinao ^b   Xie, Jinqiao ^c   Collazo, Ramón ^d   Murakami, Hisashi ^b   Okamoto, Hiroshi ^e   Koukitu, Akinori ^b   Sitar, Zlatko ^c,d  

^a TOKUYAMA CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c HexaTech Inc   (United States)

^d North Carolina State University   (United States)

^e HIROSAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ALN SUBSTRATES; BULK ALN; C-DOPED; HYDRIDE VAPOR PHASE EPITAXY; PHYSICAL VAPOR TRANSPORT; STRUCTURAL AND OPTICAL PROPERTIES; THICK LAYERS;

CARBON; EPITAXIAL GROWTH; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS;

VAPORS;

EID: 84871296478     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.125501     Document Type: Article

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