Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Li, Shibin ^a   Ware, Morgan ^b   Wu, Jiang ^a   Minor, Paul ^b   Wang, Zhiming ^a,b   Wu, Zhiming ^a   Jiang, Yadong ^a   Salamo, Gregory J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; GRADED COMPOSITION; III-NITRIDES; IMPURITY DOPING; P-N JUNCTION; P-TYPE DOPING; POLARIZATION CHARGES; RECIPROCAL SPACE MAPS; STRAIN STATE;

ALUMINUM; GALLIUM NITRIDE; X RAY DIFFRACTION;

POLARIZATION;

EID: 84866842506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4753993     Document Type: Article

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