Versatile pattern generation of periodic, high aspect ratio Si nanostructure arrays with sub-50-nm resolution on a wafer scale

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-10

  Ho, Jian Wei ^a,b,c   Wee, Qixun ^b,c   Dumond, Jarrett ^c   Tay, Andrew ^b   Chua, Soo Jin ^b,c,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d SINGAPORE MIT ALLIANCE FOR RESEARCH AND TECHNOLOGY   (Singapore)

Author keywords

Metal catalyzed electroless etching; Non porous; Si nanostructures; Step and repeat nanoimprint lithography; Sub 50 nm resolution; User defined patterns; Wafer scale

Indexed keywords

ASPECT RATIO; CATALYSIS; ELECTRON BEAM LITHOGRAPHY; ETCHING; MORPHOLOGY; NANOIMPRINT LITHOGRAPHY; NANOLITHOGRAPHY; NANOSTRUCTURES; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICES; SURFACE MORPHOLOGY;

METAL-CATALYZED ELECTROLESS ETCHINGS; NON-POROUS; SI NANOSTRUCTURES; STEP-AND-REPEAT; SUB-50 NM; USER-DEFINED PATTERNS; WAFER SCALE;

SILICON WAFERS;

EID: 84891461041     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-506     Document Type: Article

References (36)

1. Goldberger J, Hochbaum AI, Fan R, Yang P: Silicon vertically integrated nanowire field effect transistors. Nano Lett 2006, 6:973-977.
2. Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM: Reconfigurable silicon nanowire transistors. Nano Lett 2011, 12:119-124.
3. Cui Y, Zhong Z, Wang D, Wang WU, Lieber CM: High performance silicon nanowire field effect transistors. Nano Lett 2003, 3:149-152.
4. Garnett E, Yang P: Light trapping in silicon nanowire solar cells. Nano Lett 2010, 10:1082-1087.
5. x wires: fabrication, characterization, and photovoltaic application. ACS Nano 2011, 5:6629-6636.
6. Shir D, Yoon J, Chanda D, Ryu J-H, Rogers JA: Performance of ultrathin silicon solar microcells with nanostructures of relief formed by soft imprint lithography for broad band absorption enhancement. Nano Lett 2010, 10:3041-3046.
7. Zhang A, Kim H, Cheng J, Lo Y-H: Ultrahigh responsivity visible and infrared detection using silicon nanowire phototransistors. Nano Lett 2010, 10:2117-2120.
8. Patolsky F, Zheng G, Lieber CM: Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species. Nat Protoc 2006, 1:1711-1724.
9. Boukai AI, Bunimovich Y, Tahir-Kheli J, Yu J-K, Goddard WA 3rd, Heath JR: Silicon nanowires as efficient thermoelectric materials. Nature 2008, 451:168-171.
10. Chan CK, Peng H, Liu G, McIlwrath K, Zhang XF, Huggins RA, Cui Y: High-performance lithium battery anodes using silicon nanowires. Nat Nano 2008, 3:31-35.
11. Chang S-W, Oh J, Boles ST, Thompson CV: Fabrication of silicon nanopillar-based nanocapacitor arrays. Appl Phys Lett 2010, 96:153108-153103.
12. Peng K, Fang H, Hu J, Wu Y, Zhu J, Yan Y, Lee S: Metal-particle-induced, highly localized site-specific etching of Si and formation of single-crystalline Si nanowires in aqueous fluoride solution. Chemistry-A Eur J 2006, 12:7942-7947.
13. Peng KQ, Hu JJ, Yan YJ, Wu Y, Fang H, Xu Y, Lee ST, Zhu J: Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles. Adv Funct Mater 2006, 16:387-394.
14. Seeger K, Palmer RE: Fabrication of silicon cones and pillars using rough metal films as plasma etching masks. Appl Phys Lett 1999, 74:1627-1629.
15. Mao P, Han J: Massively-parallel ultra-high-aspect-ratio nanochannels as mesoporous membranes. Lab Chip 2009, 9:586-591.
16. Huang Z, Fang H, Zhu J: Fabrication of silicon nanowire arrays with controlled diameter, length, and density. Adv Mater 2007, 19:744-748.
17. Peng K, Zhang M, Lu A, Wong N-B, Zhang R, Lee S-T: Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching. Appl Phys Lett 2007, 90:163123.
18. Huang J, Chiam SY, Tan HH, Wang S, Chim WK: Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching. Chem Mater 2010, 22:4111-4116.
19. Chang S-W, Chuang VP, Boles ST, Ross CA, Thompson CV: Densely packed arrays of ultra-high-aspect-ratio silicon nanowires fabricated using block-copolymer lithography and metal-assisted etching. Adv Funct Mater 2009, 19:2495-2500.
20. Choi WK, Liew TH, Dawood MK, Smith HI, Thompson CV, Hong MH: Synthesis of silicon nanowires and nanofin arrays using interference lithography and catalytic etching. Nano Lett 2008, 8:3799-3802.
21. de Johannes B, Nadine G, Jörg VW, Ulrich G, Volker S: Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching. Nanotechnology 2010, 21:095302.
22. Vieu C, Carcenac F, Pépin A, Chen Y, Mejias M, Lebib A, Manin-Ferlazzo L, Couraud L, Launois H: Electron beam lithography: resolution limits and applications. Appl Surf Sci 2000, 164:111-117.
23. Plachetka U, Bender M, Fuchs A, Vratzov B, Glinsner T, Lindner F, Kurz H: Wafer scale patterning by soft UV-nanoimprint lithography. Microelectron Eng 2004, 73-74:167-171.
24. Ji R, Hornung M, Verschuuren M, van de Laar R, van Eekelen J, Plachetka U, Moeller M, Moormann C: UV enhanced substrate conformal imprint lithography (UV-SCIL) technique for photonic crystals patterning in LED manufacturing. Microelectron Eng 2010, 87:963-967.
25. Wang D, Ji R, Du S, Albrecht A, Schaaf P: Ordered arrays of nanoporous silicon nanopillars and silicon nanopillars with nanoporous shells. Nanoscale Res Lett 2013, 8:42.
26. Balasundaram K, Jyothi SS, Jae Cheol S, Bruno A, Debashis C, Mohammad M, Keng H, John AR, Placid F, Sanjiv S, Xiuling L: Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires. Nanotechnology 2012, 23:305304.
27. Kustandi TS, Loh WW, Gao H, Low HY: Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 2010, 4:2561-2568.
28. Huang Z, Geyer N, Werner P, de Boor J, Gosele U: Metal-assisted chemical etching of silicon: a review. Adv Mater 2011, 23:285-308.
29. Lianto P: Mechanism and catalyst stability of metal-assisted chemical etching of silicon. Singapore-MIT Alliance: National University of Singapore; 2013.
30. Dawood MK, Liew TH, Lianto P, Hong MH, Tripathy S, Thong JTL, Choi WK: Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires. Nanotechnology 2010, 21:205305.
31. Lianto P, Yu S, Wu J, Thompson CV, Choi WK: Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon. Nanoscale 2012, 4:7532-7539.
32. Peng K, Wu Y, Fang H, Zhong X, Xu Y, Zhu J: Uniform, axial-orientation alignment of one-dimensional single-crystal silicon nanostructure arrays. Angew Chem Int Ed 2005, 44:2737-2742.
33. Peng K, Lu A, Zhang R, Lee S-T: Motility of metal nanoparticles in silicon and induced anisotropic silicon etching. Adv Funct Mater 2008, 18:3026-3035.
34. Morinaga H, Suyama M, Ohmi T: Mechanism of metallic particle growth and metal-induced pitting on Si wafer surface in wet chemical processing. J Electrochem Soc 1994, 141:2834-2841.
35. Hildreth OJ, Lin W, Wong CP: Effect of catalyst shape and etchant composition on etching direction in metal-assisted chemical etching of silicon to fabricate 3D nanostructures. ACS Nano 2009, 3:4033-4042.
36. Hildreth OJ, Fedorov AG, Wong CP: 3D spirals with controlled chirality fabricated using metal-assisted chemical etching of silicon. ACS Nano 2012, 6:10004-10012.