Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

Nanotechnology

Volumn 23, Issue 30, 2012, Pages

  Balasundaram, Karthik ^a   Sadhu, Jyothi S ^a   Shin, Jae Cheol ^a   Azeredo, Bruno ^a   Chanda, Debashis ^b   Malik, Mohammad ^a   Hsu, Keng ^a   Rogers, John A ^b   Ferreira, Placid ^a   Sinha, Sanjiv ^b   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL DIRECTION; DOPED SILICON; DOPING LEVELS; ETCHING SOLUTIONS; ETCHING TIME; LOW TEMPERATURES; METAL PATTERNING; METAL-ASSISTED CHEMICAL ETCHING; POROSITY CONTROL; SI NANOWIRE; SOFT LITHOGRAPHY; SUBMICRON; THERMAL DEWETTING;

ASPECT RATIO; ETCHING; POROSITY; SILICON;

NANOWIRES;

EID: 84863696516     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/30/305304     Document Type: Article

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