Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 88, Issue 23, 2013, Pages

  Kageshima, Hiroyuki ^a   Hibino, Hiroki ^a   Yamaguchi, Hiroshi ^a   Nagase, Masao ^b  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84890717538     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.235405     Document Type: Article

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