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Volumn 84, Issue 11, 2011, Pages

Model for the epitaxial growth of graphene on 6H-SiC(0001)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 80053590291     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.115459     Document Type: Article
Times cited : (28)

References (21)
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    • Hupalo, M.1    Conrad, E.H.2    Tringides, M.C.3
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    • Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
    • DOI 10.1016/j.surfrep.2005.08.004, PII S0167572906000021
    • J. W. Evans, P. A. Thiel, and M. C. Bartelt, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/j.surfrep.2005.08.004 61, 1 (2006). (Pubitemid 44294396)
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    • in edited by K. E. Sickafus, E. A. Kotomin, and B. P. Uberuaga (Springer Netherlands, Dordrecht
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    • (2007) Radiation Effects in Solids , pp. 1-23
    • Voter, A.F.1
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    • Many experiments suggest that the first-layer nucleation barrier is small, whereas there is finite second-layer nucleation barrier. The authors thank Dr. Hannon from IBM T. J. Watson Research Center and Dr. Bartelt from Sandia National Laboratory for useful discussions. See also Ref..
    • Many experiments suggest that the first-layer nucleation barrier is small, whereas there is finite second-layer nucleation barrier. The authors thank Dr. Hannon from IBM T. J. Watson Research Center and Dr. Bartelt from Sandia National Laboratory for useful discussions. See also Ref..
  • 21
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    • PELNFM 1386-9477 10.1016/j.physe.2009.11.151
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    • Norimatsu, W.1    Kusunoki, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.