Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates

Applied Physics Letters

Volumn 103, Issue 24, 2013, Pages

  Bengoechea Encabo, A ^a   Albert, S ^a   Zuniga Perez J ^b   De Mierry, P ^b   Trampert, A ^c   Barbagini, F ^a   Sanchez Garcia, M A ^a   Calleja, E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC PLANE; GAN NANOCOLUMNS; GAN NANOSTRUCTURES; GAN TEMPLATE; HIGH QUALITY; PHOTOLUMINESCENCE EMISSION; SELECTIVE AREA GROWTH; STRAIN-FREE MATERIALS;

NANOSTRUCTURES;

GALLIUM NITRIDE;

EID: 84890468047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4846455     Document Type: Article

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