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Volumn 98, Issue 12, 2011, Pages

Efficient blocking of planar defects by prismatic stacking faults in semipolar (11 2- 2) -GaN layers on m-sapphire by epitaxial lateral overgrowth

(5) Lacroix, B a Chauvat, M P a Ruterana, P a Nataf, G b De Mierry, P b

a UNIVERSITÉ DE CAEN (France)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE PHOTOLUMINESCENCE; BASAL STACKING FAULTS; EPITAXIAL LATERAL OVERGROWTH; FOUR-ORDER; GAN LAYERS; HIGH QUALITY; PLANAR DEFECT; PRISMATIC STACKING FAULTS; SEMIPOLAR; SOLID STATE LIGHTING;

EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE;

STACKING FAULTS;

EID: 79953842358 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3571455 Document Type: Article

Times cited : (22)

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