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Volumn 48, Issue 3, 2009, Pages 031002-

Comparison between polar (0001) and semipolar (112̄2) nitride blue-green light-emitting diodes grown on c- And m-plane sapphire substrates

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BLUE SHIFT; BLUE-GREEN LIGHT; C-PLANE SAPPHIRE SUBSTRATES; CARRIER LOCALIZATION; COMPARATIVE STUDIES; DC INJECTION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAN TEMPLATE; INDIUM CONTENT; INDIUM-COMPOSITION FLUCTUATIONS; LOCALIZED STATE; M-PLANE; METAL-ORGANIC; MOCVD; PIEZO-ELECTRIC FIELDS; POTENTIAL MINIMA; QUANTUM WELL; RED-SHIFTED; SEMIPOLAR;

EID: 67049086599     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.031002     Document Type: Article
Times cited : (62)

References (34)
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    • S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, and S. P. DenBaars: Appl. Phys. Lett. 73 (1998) 2006.
    • S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, and S. P. DenBaars: Appl. Phys. Lett. 73 (1998) 2006.
  • 27
    • 67650847732 scopus 로고    scopus 로고
    • Doctoral thesis, Université de Nice Sophia-Antipolis
    • T. Guehne: Doctoral thesis, Université de Nice Sophia-Antipolis (2008).
    • (2008)
    • Guehne, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.