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Volumn 1, Issue 4, 2011, Pages

Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature

(8) Yu, I S a Wu, T H a Wu, K Y a Cheng, H H a Mashanov, V I b Nikiforov, A I b Pchelyakov, O P b Wu, X S c

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

c NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ENERGY GAP; GERMANIUM; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR ALLOYS; TEMPERATURE;

ANALYSIS OF VARIOUS; CRITICAL THICKNESS; DEFECT-FREE; EXPERIMENTAL INVESTIGATIONS; LOW TEMPERATURES;

TIN;

EID: 84855302530 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.3656246 Document Type: Article

Times cited : (38)

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