Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment

Applied Physics Letters

Volumn 102, Issue 25, 2013, Pages

  Li, H ^a   Cui, Y X ^b   Wu, K Y ^a   Tseng, W K ^a   Cheng, H H ^a   Chen, H ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; EPILAYERS GROWN; SI WAFER; SN CONTENTS; THERMAL-ANNEALING;

ANNEALING; DISLOCATIONS (CRYSTALS); GERMANIUM; SILICON WAFERS; STRAIN RELAXATION; TIN;

EPILAYERS;

EID: 84879874680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812490     Document Type: Article

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