High-responsivity GeSn short-wave infrared p-i-n photodetectors

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Zhang, Dongliang ^a   Xue, Chunlai ^a   Cheng, Buwen ^a   Su, Shaojian ^b   Liu, Zhi ^a   Zhang, Xu ^a   Zhang, Guangze ^a   Li, Chuanbo ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HUAQIAO UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; GE SUBSTRATES; P-I-N PHOTODETECTORS; PHOTO DETECTION; RESPONSIVITY; REVERSE BIAS; REVERSE BIAS VOLTAGE; SHORT WAVE INFRARED;

GERMANIUM; PHOTONS;

PHOTODETECTORS;

EID: 84876378902     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801957     Document Type: Article

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