Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures

Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures

Volumn , Issue , 2006, Pages 1-482

  Harrison, Paul ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84889351979     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/0470010827     Document Type: Book

References (277)

1. N. W. Ashcroft and N. D. Mermin, Solid State Physics, Saunders College Publishing, Philadelphia, 1976.
2. J. S. Blakemore, Solid State Physics, University Press, Cambridge, Second edition, 1985.
3. R. M. Eisberg, Fundamentals of Modern Physics, Wiley, New York, 1961.
4. R. T. Weidner and R. L. Sells, Elementary Modern Physics, Allyn and Bacon, Boston, Third edition, 1980.
5. M. Jaros, Physics and Applications of Semiconductor Microstructures, Clarendon Press, Oxford, 1989.
6. J. H. Davies and A. R. Long, Eds., Physics of Nanostructures, IOP Publishing, Bristol, 1992.
7. M. J. Kelly, Low Dimensional Semiconductors: Materials, Physics, Technology, Devices, Clarendon Press, Oxford, 1995.
8. R. Turton, The Quantum Dot: A Journey into the Future of Microelectronics, W. H. Freeman Spectrum, Oxford, 1995.
9. E. L. Ivchenko and G. Pikus, Superlattices and other Heterostructures: Symmetry and Optical Phenomena, Springer-Verlag, Berlin, 1995.
10. A. Shik, Quantum Wells: Physics and Electronics of Two-Dimensional Systems, World Scientific, London, 1997.
11. P. K. Basu, Theory of Optical Processes in Semiconductors, Clarendon, Oxford, 1997.
12. P. A. M. Dirac, The Principles of Quantum Mechanics, Clarendon Press, Oxford, Fourth edition, 1967.
13. S. Nakamura and G. Fasol, The blue laser diode, Springer, Berlin, 1997.
14. S. Adachi, GaAs and Related Materials, World Scientific, Singapore, 1994.
15. Landolt and Bornstein, Eds., Numerical Data and Functional Relationships in Science and Technology, vol. 22a of Series HI, Springer-Verlag, Berlin, 1987.
16. A. Tredicucci, C. Gmachl, F. Capasso, D. L. Sivco, and A. L. Hutchinson, 'Long wavelength superlattice quantum cascade lasers at A =17 um', Appl. Phys. Lett., 74:638, 1999.
17. G. Bastard, 'Superlattice band structure in the envelope function approximation', Phys. Rev. 5, 24:5693, 1981.
18. G. A. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, Les Editions de Physique, Paris, 1988.
19. M. G. Burt, 'The justification for applying the effective-mass approximation to microstructures', j. Phys.: Condens. Matter, 4:6651, 1992.
20. M. G. Burt, 'Fundamentals of envelope function theory for electronic states and photonic modes in nanostructures', J. Phys.:Condensed Matter, 9:R53, 1999.
21. Fei Long, W. E. Hagston, and P. Harrison, 'Breakdown of the envelope function/effective mass approximation in narrow quantum wells', in The Proceedings of the 23rd International Conference on the Physics of Semiconductors, Singapore, 1996, pp. 1819-1822, World Scientific.
22. J. W. Leech, Classical Mechanics, Chapman and Hall, London, Second edition, 1965.
23. I. S. Gradshteyn and I. M. Ryzhik, Table of Integrals, Series, and Products, Academic Press, London, Fifth edition, 1994.
24. G. T. Einevoll and L. J. Sham, 'Boundary conditions for envelope functions at interfaces between dissimilar materials', Phys. Rev. B, 49:10533, 1994.
25. I. Galbraith and G. Duggan, 'Envelope-function matching conditions for GaAs/( Al, Ga) As heterojunctions', Phys. Rev., 38:10057, 1988.
26. J. W. Conley, C. B. Duke, G. D. Mahan, and J. J. Tiemann, 'Electron tunneling in metal-semiconductor barriers', Phys. Rev., 150:466, 1966.
27. D. J. BenDaniel and C. B. Duke, 'Space-charge effects on electron tunneling', Phys. Rev., 152:683, 1966.
28. W. E. Hagston, P. Harrison, T. Piorek, and T. Stirner, 'Boundary conditionson current carrying states and the implications for observation of Bloch oscillations', Superlatt. Microstruct., 15:199-202, 1994.
29. L. I. Schiff, Quantum Mechanics, McGraw-Hill, London, 1968.
30. O. von Roos, 'Position dependent effective masses in semiconductor theory', Phys. Rev. B, 27:7547, 1983.
31. R. A. Morrow and K. R. Brownstein, 'Model effective mass Hamiltonians for abrupt heterojunctions and the associated wave function matching conditions', Phys. Rev. B, 30:678, 1984.
32. R. A. Morrow, 'Establishment of an effective-mass Hamiltonian for abrupt heterojunctions', Phys. Rev. B, 35:8074, 1987.
33. Ch. Schnittler and M. Kirilov, 'Hamiltonian and boundary conditions for electrons in semiconductor heterostructures',phys. stat. sol. (b), 176:143, 1993.
34. J. Khurgin, 'Novel configuration of self-electro-optic effect device based on asymmetric quantum wells', Appl. Phys. Lett., 53:779, 1988.
35. Masahiko Morita, Katsuyuki Goro, and Takeo Suzuki, 'Quantum-confined Stark effect in stepped-potential wells', Japanese J. Appl. Phys., 29:L1663, 1990.
36. N. Susa and T. Nakahara, 'Large blue shifts induced by Stark effect in asymmetric coupled quantum well', Electronics Letters, 28:941, 1992.
37. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, 'Band-edge electroabsorption in quantum well structures-the quantumconfined stark-effect', Phys. Review Letters, 53:2173-2176, 1984.
38. Milton Abramowitz and Irene A. Stegun, Handbook of Mathematical Functions, Dover Publications Inc., New York, 1965.
39. S. Vatannia and G. Gildenblat, 'Airy's function implementation of the transfer-matrix method for resonant tunneling in variably spaced finite superlattices', IEEE Journal of Quantum Electronics, 32:1093, 1996.
40. M. P. Halsall, J. E. Nicholls, J. J. Davies, B. Cockayne, and P. J. Wright, 'CdS/CdSe intrinsic stark superlattices', J. Applied Phys., 71:907-915, 1992.
41. L. Friedman, R. A. Soref, and G. Sun, 'Quantum parallel laser: A unipolar superlattice interminiband laser', IEEE Photonics Technology Letters, 9:593-595, 1997.
42. G. Scamarcio, F. Capasso, J. Faist, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, 'Tunable interminiband infrared emission in superlattice electron transport', Applied Phys. Letters, 70:1796-1798, 1997.
43. G. Scamarcio, F. Capasso, C. Sirtori, J. Faist, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, 'High-power infrared (8-micrometer wavelength) superlattice lasers', Science, 276:773-776, 1997.
44. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, Second edition, 1981.
45. D. K. Ferry, Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, IOP Publishing, London, 1995.
46. S. Datta, Quantum Phenomena, vol. Volume VIII of Modular Series on Solid State Devices, Addison-Wesley, New York, 1989.
47. S. Luyri, High speed semiconductor devices, p. 399, Wiley-Interscience, New York, 1990.
48. J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, 'Resonant tunnelling diodes:Models and properties', Proceedings of the IEEE, 86:639, 1998.
49. Hiroshi Mizuta and Tomonori Tanoue, The Physics and Applications of Resonant Tunnelling Diodes, Cambridge University Press, Cambridge, 1995.
50. J. K. Furdyna, ', J. Appl. Phys., 64:R29, 1988.
51. J. A. Gaj, Diluted Magnetic Semiconductors, vol. 25, chapter Chapter 7, Academic, Boston, 1988.
52. N. Malkova and U. Ekenberg, 'Spin properties of quantum wells with magnetic barriers. I. A k.p analysis for structures with normal band ordering', Phys. Rev., 66:155324, 2002.
53. T. Wenckebach, Essentials of Semiconductor Physics, John Wiley and Sons, Ltd., Chichester, 1999.
54. I. Savic, V. Milanovic, Z. Bconic, D. Indjin, V. Jovanovic, and P. Harrison, 'Dilute magnetic semiconductor quantum-well structures for magnetic field tunable farinfrared/Terahertz absorption', IEEE J. Quan. Elec., 40:1614-1621, 2004.
55. R. L. Liboff, Introductory Quantum Mechanics, Addison Wesley, San Francisco, Fourth edition edition, 2003.
56. R. Turton, The Physics of Solids, Oxford University Press, Oxford, 2000.
57. A. R. Sugg and J-P. C. Leburton, 'Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique', IEEE Journal of Quantum Electronics, 27:224, 1991.
58. J. P. Killingbeck, Microcomputer Algorithms, Hilger, Bristol, 1992.
59. E. H. Li, 'Interdiffusion as a means of fabricating parabolic quantum wells for the enhancement of the nonlinear third-order susceptibility by triple resonance', Applied Phys. Letters, 69:460-462, 1996.
60. S. Fliigge, Practical Quantum Mechanics, Springer-Verlag, Berlin, 1970.
61. T. Stirner, 'Notes on the Poschl Teller potential hole', unpublished.
62. S. R. Jackson, J. E. Nicholls, W. E. Hagston, P. Harrison, T. Stirner, J. H. C. Hogg, B. Lunn, and D. E. Ashenford, 'Magneto-optical study of exciton binding energies band offsets and the role of interface potentials in CdTe/Cd1-xMnxTe multiple quantum wells', Phys. Rev. B, 50:5392-5403, 1994.
63. F. Schwabl, Quantenmechanik, Springer, Berlin, 1990.
64. Y. Hirayama, J. H. Smet, L. H. Peng, C. G. Fonstad, and E. P. Ippen, 'Feasibility of 1.55 mu-m intersubband photonic devices using ingaas/alas pseudomorphic quantumwell structures', Japanese J. Applied Phys. Part 1-Regular Papers Short Notes & Review Papers, 33:890-895, 1994.
65. H. Asai and Y. Kawamura, 'Intersubband absorption in Ino.53Gao.47As/Ino.52Alo.4sAs multiple quantum-wells', Phys. Review B-CondensedMatter, 43:4748-4759, 1991.
66. A. Raymond, J. L. Robert, and C. Bernard, "The electron effective mass in heavily doped GaAs', J. Phys. C: Solid State Phys., 12:2289, 1979.
67. P. Harrison and R. W. Kelsall, '1.55um intersubband pumping of an In0.53Ga0.47As/AlAs:InP symmetric double quantum well terahertz laser', Physica E, 2:468-472, 1998.
68. J. H. Smet, L. H. Peng, Y. Hirayama, and C. G. Fonstad, 'Electron intersubband transitions to 0.8 eV (1.55 um) in InGaAs/AlAs single quantum wells', Appl. Phys. Lett., 64:986, 1994.
69. W. J. Duffin, Electricity and Magnetism, McGraw-Hill, Third edition, 1980.
70. C. M. Snowden, Ed., Semiconductor Device Modelling, Springer-Verlag, 1988.
71. C. M. Snowden and R. E. Miles, Eds., Compound Semiconductor Device Modelling, Springer-Verlag, 1993.
72. P. H. Ladbrooke, MMIC design: GaAs FETs and HEMTs, Artech House, 1989.
73. J. M. Golio, Microwave MESFETs and HEMTs, Artech House, 1991.
74. E. H. Li, Ed., Selected Papers on Quantum Well Intermixing for Photonics, SPIE Optical engineering press, Bellingham, 1998.
75. A. Fick, ', Ann. Phys., 170:59, 1855.
76. W. D. Callister Jr., Materials Science and Engineering, John Wiley and Sons, Inc., New York, 1985.
77. P. Harrison, W. E. Hagston, and T. Stirner, 'Excitons in diffused quantum wells', Phys. Rev. B, 47:16404-16409, 1993.
78. Nguyen The Khoi P. Kossacki, J. A. Gaj, G. Karczewski, T. Wojtowicz, E. Janik, A. Zakrzewski, M.Kutrowski, and J. Kossut, 'Rapid thermal processing of semimagnetic superstructures studied by magnetoreflectivity', Superlatt. Microstructures, 16:63, 1994.
79. M. T. Furtado and M. S. S. Loural, 'Direct evaluation of interdiffusion coefficients in quantum well heterostructures usinfg photoluminescence', Superlatt. Microstruct., 14:21, 1993.
80. D. Tonnies, G. Bacher, A. Forchel, A. Waag, and G. Landwehr, 'Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing', Appl. Phys. Lett., 64:766, 1994.
81. J. Crank, The Mathematics of Diffusion, Oxford University Press, London, 1956.
82. P. Shewmon, Diffusion in Solids, McGraw-Hill, New York, 1963.
83. B. Tuck, 'Some explicit solutions to the non-linear diffusion equation', J. Phys. D: Appl. Phys., 9:123, 1976.
84. D. Shaw, 'Diffusion mechanisms in II-VI materials', Journal of Crystal Growth, 86:778, 1988.
85. K. Binder, 'Atomistic modeling of materials properties by Monte-Carlo simulation', Advanced Materials, 4:540, 1992.
86. P. Harrison, 'Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells', Semicond. Sci. Technol, 11:1022-1025, 1996.
87. J. M. Fatah, I. Karla, P. Harrison, T. Stirner, W. E. Hagston, and J. H. C. Hogg, 'Defect induced diffusion mechanisms in ion implanted quantum well structures', in The Proceedings of the 22nd International Conference on the Physics of Semiconductors, Singapore, 1994, pp. 2275-2278, World Scientific.
88. I. Karla, D. Shaw, W. E. Hagston, J. H. C. Hogg, S. Chalk, J. E. Nicholls, and C. Peili, 'Measurement of interdiffusion in II-VI quantum-well structures using optical methods', J. Appl. Phys., 79:1895, 1996.
89. I. Karla, J. H. C. Hogg, W. E. Hagston, J. Fatah, and D. Shaw, 'Monitoring of intermixing and interdiffusion by x-ray diffraction of ion-implanted quantum-well structures', J. Appl. Phys., 79:1898, 1996.
90. B. Elman, E. S. Koteles, P. Melman, and C. A. Armiento, 'GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing', J. Appl. Phys., 66:2104, 1989.
91. M. K. Chai, S. F. Wee, K. P. Homewood, W. P. Gillin, T. Cloitre, and R. L. Aulombard, 'An optical study of interdiffusion in ZnSe/ZnCdSe', Appl. Phys. Lett., 69:1579, 1996.
92. I. V. Bradley, W. P. Gillin, K. P. Homewood, and R. P. Webb, "The effects of ion implantation on the interdiffusion coefficients in In1-xGaxAs/GaAs quantum well structures', J. Appl. Phys., 73:1686, 1993.
93. M. A. Litovskii and R. SH. Malkovich, 'Method of determining the diffusion profile for a concentration dependent diffusion coefficient', phys. stat. sol. (a), 36:K145, 1976.
94. A. D. Pelton and T. H. Etsell, 'Analytical solution of Pick's second law when the diffusion coefficient varies directly as concentration', Acta Metallurgica, 20:1269, 1972.
95. F. C. Frank and D. Turnbull, ', Phys. Rev., 104:617, 1956.
96. T. Taskin, S. Gardelis, J. H. Evans, B. Hamilton, and A. R. Peaker, 'Sharp 1.54 um luminescence from porous erbium implanted silicon', Electronics Letters, 31:2132, 1995.
97. J. F. Ziegler, J. P. Bierrack, and U. Littmark, The Stopping and Range of Ions in Matter, vol. 1, Pergamon Press, 1985.
98. P. Harrison, 'Numerical solution to the general one-dimensional diffusion equation in semiconductor heterostructures', phys. stat. sol. (b), 197:81-90, 1996.
99. J. M. Fatah, P. Harrison, T. Stirner, J. H. C. Hogg, and W. E. Hagston, 'Double crystal X-ray diffraction simulation of diffusion in semiconductor microstructures', J. Appl. Phys., 83:4037-4041, 1998.
100. E. F. Schubert, Ed., Delta-doping of Semiconductors, Cambridge University Press, Cambridge, 1996.
101. S. M. Sze, Semiconductor Devices: Physics and Technology, Wiley, New York, 1985.
102. P. Harrison, Fei Long, and W. E. Hagston, 'Empirical pseudo-potential calculation of the in-plane effective masses of electron and holes of two-dimensional excitons in CdTe quantum wells', Superlatt. Microstruct., 19:123-130, 1996.
103. C. Mailhiot, Yia-Chung Chang, and T. C. McGill, 'Energy spectra of donors in GaAs/Ga1-xAlx As quantum well structures in the effective mass approximation', Phys. Rev. B, 26:4449, 1982.
104. R. L. Greene and K. K. Bajaj, 'Energy levels of hydrogenic impurity states in GaAs-Ga1-xAsxAs quantum well structures', Solid State Commun., 45:825, 1983.
105. G. N. Carneiro, G. Weber, and L. E. Oliveira, 'Binding energies and intra-donor absorption spectra in GaAs-GaAlAs quantum wells', Semicond. Sci. Technol, 10:41, 1995.
106. S. Chaudhuri and K. K. Bajaj, 'Effect of non-parabolicity on the energy levels of hydrogenic donors in GaAs-Ga1-xALxAs quantum-well structures', Phys. Rev. B, 29:1803, 1984.
107. Chong ru Huo, Ben-Yuan Gu, and Lei Gu, 'General variational expressions for the calculation of the binding eneries of anisotropic donor states in stepped quantum wells', J. Appl. Phys., 70:4357, 1991.
108. R. G. Roberts, P. Harrison, and W. E. Hagston, 'The symmetry of donor bound electron wavefunctions in quantum wells', Superlatt. Microstruct., 23:289-296, 1998.
109. W. E. Hagston, P. Harrison, and T. Stirner, 'Neutral donors and spin-flip Raman spectra in dilute magnetic semiconductor microstructures', Phys. Rev. B, 49:8242-8248, 1994.
110. W. T. Masselink, Yia-Chung Chang, and H. Morkoc, 'Binding-energies of acceptors in GaAs-AlxGa1-xAs quantum-wells', Phys. Rev. B, 28:7373, 1983.
111. R. C. Miller, A. C. Gossard, W. T. Tsang, and O. Munteanu, 'Extrinsic photoluminescence from GaAs quantum wells', Phys. Rev. B, 25:3871, 1982.
112. S. Fraizzoli, F. Bassani, andR. Buczko, 'Shallow donor impurities inGaAs-Ga1-x AlxAs quantum well structures: Role of the dielectric constant mismatch', Phys. Rev. 5, 41:5096, 1990.
113. U. Ekenberg, 'Non-parabolicity effects in a quantum well-sublevel shift, parallel mass, and Landau levels', Phys. Rev. B, 40:7714, 1989.
114. S. R. Parihar and S. A. Lyon, Quantum Well Intersubband Transitions Physics and Devices, p. 403, Kluwer, Netherlands, 1994.
115. J. K. Furdyna and J. Kossut Volume Editors,,' in Semiconductors and Semimetals, R. K. Willardson and Treatise Editors A. C. Beer, Eds., vol. 25. Academic, Boston, 1988.
116. A. Twardowski, Diluted Magnetic Semiconductors, World scientific, Singapore, 1996.
117. J. M. Fatah, T. Piorek, P. Harrison, T. Stirner, and W. E. Hagston, 'Numerical simulation of anti-ferromagnetic spin-pairing effects in diluted magnetic semiconductors and enhanced paramagnetism at interfaces', Phys. Rev. B, 49:10341-10344, 1994.
118. J. A. Gaj, C. Bodin-Deshayes, P. Peyla, G. Feuillet J. Cibert, Y. Merle d'Aubigne, R. Romestain, and A. Wasiela, 'Magneto-optical study of interface mixing in CdTe-(Cd, Mn)Te system', in Proceedings of the 21st International Conference on the Physics of Semiconductors, Singapore, 1992, p. 1936, World Scientific.
119. A. K. Ramdas and S. Rodriguez,', in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Eds., Boston, 1988, vol. 25, p. 345, Academic.
120. M. P. Halsall, S. V. Railson, D. Wolverson, J. J. Davies, B. Lunn, and D. E. Ashenford, 'Spin-flip Raman scattering in CdTe/Cd1-xMnxTe multiple quantum wells: A model system for the study of electron-donor binding in semiconductor heterostructures', Phys. Rev. 5, 50:11755, 1994.
121. D. R. Yakovlev, 'Two dimensional magnetic polarons in semimagnetic quantum well structures', in Festkorperprobleme/Advances in Solid State Physics, U. Roessler, Ed., Braunschweig, 1992, vol. 32, p. 251, Vieweg.
122. W. E. Hagston, P. Harrison, J. H. C. Hogg, S. R. Jackson, J. E. Nicholls, T. Stirner, B. Lunn, and D. E. Ashenford, 'An MBE investigation of interface disorder effects in magnetic II-VI quantum wells', J. Vac. Sci. Technol. B, 11:881, 1993.
123. T.Stirner, P.Harrison, W.E.Hagston, and J.P.Goodwin, 'Bandgap renormalisation and observation of the type I-type II transition in quantum well systems', J. Appl. Phys., 73:5081-5087, 1993.
124. S. O. Kasap, Principles of Electrical Engineering Materials and Devices, Irwin McGraw-Hill, Boston, 1997.
125. G. Xiao, J. Lee, J. J. Liou, and A. Ortiz-Conde, 'Incomplete ionization in a semiconductor and its implications to device modeling', Microelectronics Reliability, 39:1299, 1999.
126. G. L. Pearson and J. Bardeen, 'Electrical properties of pure silicon and silicon alloys containing Boron and Phosphorous', Phys. Rev., 75:865, 1949.
127. M. Avon and J. S. Prener, Eds., Physics and Chemistry of II-VI compounds, North-Holland, Amsterdam, 1967.
128. C. P. Hilton, W. E. Hagston, and J. E. Nicholls, 'Variational-methods for calculating the exciton binding-energies in quantum-well structures', J. Phys. A, 25:2395, 1992.
129. P. Hilton, J. P. Goodwin, P. Harrison, and W. E. Hagston, 'Theory of exciton energy levels in multiply periodic systems', J. Phys. A: Math. Gen., 25:5365-5372, 1992.
130. P. Harrison, J. P. Goodwin, and W. E. Hagston, 'Exciton energy levels and band-offset determination in magnetic superlattices', Phys. Rev. B, 46:12377-12383, 1992.
131. P. Harrison, T. Piorek, W. E. Hagston, and T. Stirner, 'The symmetry of the relative motion of excitons in semiconductor heterostructures', Superlatt. Microstruct., 20:45-57, 1996.
132. R. G. Roberts, P. Harrison, T. Stirner, and W. E. Hagston, 'Stark ladders in strongly coupled finite superlattices', J. de Physique IV, 3-C5:203-206, 1993.
133. P. Harrison and W. E. Hagston, 'The effect of linear and non-linear diffusion on exciton energies in quantum wells', J. Appl. Phys., 79:8451-4855, 1996.
134. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, 'Exciton binding energy in quantum wells', Phys. Rev. B, 26:1974, 1982.
135. S. K. Chang, A. V. Nurmikko, Wu J. W, L. A. Kolodziejski, and R. L. Gunshor, 'Band offsets and excitons in CdTe (Cd, Mn)Te quantum wells', Phys. Rev. B, 37:1191, 1988.
136. M. M. Dignam and J. E. Sipe, 'Exciton state in Type I and Type II GaAs-Ga1-xAlxAs superlattices', Phys. Rev. B, 41:2865, 1990.
137. U. Ekenberg and M. Altarelli, 'Exciton binding-energy in a quantum-well with inclusion of valence band coupling and nonparabolicity', Phys. Rev. B, 35:7585, 1987.
138. E. L. Ivchenko, A. V. Kavokin, G. R. Posina V. P. Kochereshko, I. N. Uraltsev, D. R. Yakovlev, R. N. Bicknell-Tassius, A. Waag, and G. Landwehr, 'Exciton oscillator strength in magnetic-field-induced spin superlattices CdTe (Cd, Mn)Te', Phys. Rev. B, 46:7713, 1992.
139. Abdsadek Bellabchara, Pierre Lefebvre, Philippe Christol, and Henry Mathieu, 'Improved modeling of excitons in type-II semiconductor heterostructures by use of a threedimensional variational function', Phys. Rev. B, 50:11840, 1994.
140. S. V. Branis J. Cen and K. K. Bajaj, 'Exciton binding energies in finite-barrier Type II quantum-well structures in a magnetic field', Phys. Rev. B, 44:12848, 1991.
141. Y. Shinozuka and M. Matsuura, 'Wannier excitons in quantum wells', Phys. Rev. B, 28:4878, 1983.
142. Spiros V. Branis, J. Cen, and K. K. Bajaj, 'Effect of magnetic-fields on exciton binding energies in Type II GaAs-AlAs quantum-well structures', Phys. Rev. B, 44:11196, 1991.
143. Yuan ping Feng, Hiap Sing Tan, and Harold N. Spector, 'Quantum well excitons in an electric field: Two versus three dimensional behaviour', Superlatt. Microstruct., 17:267, 1995.
144. J. W. Wu and A. V. Nurmikko, 'Wannier excitons in semiconductor quantum wells with small valence band-offsets-a generalised variational approach', Phys. Rev. B, 38:1504, 1988.
145. M. J. L. S. Haines, N. Ahmed, S. J. A. Adams, K. Mitchell, I. R. Agool, C. R. Pidgeon, B. C. Cavenett, E. P. O'Reilly, A. Ghiti, and M. T. Emeny, 'Exciton-binding-energy maximum in Ga1-xInxAs/GaAs quantum wells', Phys. Rev. B, p. 11944, 1991.
146. E. E. Mendez, F. Agullo-Reuda, and J. M. Hong, 'Stark localisation in GaAs-GaALAs superlattices under an electric field', Phys, Rev. Lett., 60:2426, 1988.
147. A. V. Kavokin, V. P. Kochereshko, G. R. Posina, I. N. Uraltsev, D. R. Yakovlev, G. Landwehr, R. N. Bicknell-Tassius, and A. Waag, 'Effect of the electron Coulomb potential on hole confinement in n-VI quantum wells', Phys. Rev. B, 46:9788, 1992.
148. J. Warnock, B. T. Jonker, A. Petrou, W. C. Chou, and X. Liu, 'Exciton energies in shallow quantum-wells and spin superlattices', Phys. Review B-Condensed Matter, 48:17321-17330, 1993.
149. T. Piorek, P. Harrison, and W. E. Hagston, 'The relative importance of self-consistency and variable symmetry in the calculation of exciton energies intype-I and type-II semiconductor heterostructures', Phys. Rev. B, 52:14111-14117, 1995.
150. T. Piorek, W. E. Hagston, and P. Harrison, 'Spontaneous symmetry breaking of excitons in multiple quantum wells', Solid State Commun., 99:601-605, 1996.
151. C. Benoit á la Guillaume, 'Non-existence of spontaneous symmetry breaking of excitons in multiple-quantum-wells', Solid State Commun., 101:847, 1997.
152. J. F. Nye, Physical Properties of Crystals, Clarendon Press, Oxford, 1957.
153. J. W. Matthews and A. E. Blakeslee, 'Defects in epitaxial multilayers: I. Misfit dislocations', J. Cryst. Growth, 27:118, 1974.
154. V. D. Jovanonic, Z. Ikonic, D. Indjin, P. Harrison, V. Milanovic, and R. A. Soref, 'Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm', J. Appl. Phys., 93:3194, 2003.
155. J Faist, F Capasso, Dl Sivco, Al Hutchinson, Sng Chu, and Ay Cho, 'Short wavelength (lambda similar to 3.4 mu m) quantum cascade laser based on strained compensated Ingaas/alinas', Applied Physics Letters, 72:680-682, 1998.
156. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, 'Pyroelectric properties of Al(In)GaN/GaN hetero-and quantum well structures', J. Phys.: Condens. Matter, 14:3399, 2002.
157. D. L. Smith and C. Mailhiot, 'Theory of semiconductor superlattice electronic structure', Rev. Mod. Phys., 62:173, 1990.
158. C. Gmachl, H. M. Ng, and A. Y. Cho, 'Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ ~ 1.75-4.2 um', Appl. Phys. Lett., 77:334, 2000.
159. J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, 'Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells', Phys. Rev. B, p. 9435, 1998.
160. S. GangopadhyayandB. R. Nag, 'Energy levels in finite barrier triangular and arrowheadshaped quantum wires', J. Appl. Phys., 81:7885, 1997.
161. I. Kamiya, I. Tanaka, and H. Sakaki, 'Optical properties of near surface-InAs quantum dots and their formation processes', Physica E, 2:637, 1998.
162. E. Palange, G. Capellini, L. Di Gaspare, and F. Evangelisti, 'Atomic force microscopy andphotoluminescence study of Ge layers and self-organised Ge quantum dots on Si(lOO)', Appl. Phys. Lett., 68:2982, 1996.
163. D. Gershoni, H. Temkin, G. J. Dolan, J. Dunsmuir, S. N. G. Chu, and M. B. Panish, 'Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures', Appl. Phys. Lett., 53:995, 1988.
164. M. Califano and P. Harrison, 'Approximate methods for the solution of quantum wires and dots: Connection rules between pyramidal, cuboid and cubic dots', J. Appl. Phys., 86:5054-5059, 1999.
165. S. Gangopadhyay and B. R. Nag, 'Energy levels in three-dimensional quantumconfinement structures', Nanotechnology, 8:14, 1997.
166. I. N. Stranski and L. Von Krastanov, ', Akad. Wiss. Lit. Mainz Math.Natur. Kl. lib, 146:797, 1939.
167. M. A. Cusack, P. R. Briddon, and M. Jaros, 'Electronic structure of InAs/GaAs selfassembled quantum dots', Phys. Rev. B, 54:R2300, 1996.
168. M. Califano and P. Harrison, 'Composition, volume and aspect ratio dependence of the strain distribution, band lineups and electron effective masses in self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots', J. Appl Phys., 91:389-398, 2002.
169. M. Califano and P. Harrison, 'Presentation and experimental validation of a single-band, constant-potential model for self-assembled InGa/GaAs quantum dots', Phys. Rev. B, 61:10959-10965, 2000.
170. M. Califano and P. Harrison, 'Quantum box energies as a route to the ground state levels of self-assembled quantum dots', J. Appl. Phys., 88:5870-5874, 2000.
171. P.Harrison, Computational Methods in Physics, Chemistry and Mathematical Biology: An Introduction, John Wiley and Sons, Ltd, Chichester, United Kingdom, 2001, 201 pages, ISBN 0 471 49563 8 (paperback) 0 471 49562 X.
172. D. El-Moghraby, R. G. Johnson, and P. Harrison, 'Calculating modes of quantum wire and dot systems using a finite differencing technique', Computer Physics Communications, 150:235-246, 2003.
173. D. El-Moghraby, R. G. Johnson, and P. Harrison, 'The effect of inter-dot separation on the finite difference solution of vertically aligned coupled quantum dots', Computer Physics Communications, 155:236-243, 2003.
174. R. Loudon, The Quantum Theory of Light, Oxford University Press, Oxford, Second edition, 1983.
175. F. W. Sears and G. L. Salinger, Thermodynamics, Kinetic Theory and Statistical Thermodynamics, Addison-Wesley, Reading, Massachusetts, Third edition, 1975.
176. B. K. Ridley, Quantum Processes in Semiconductors, Clarendon, Oxford, Second edition, 1988.
177. M. Lundstrom, Fundamentals of Carrier Transport, Modular series on solid state devices. Addison-Wesley, Reading, Wokingham, 1990.
178. B. K. Ridley, Electrons andPhonons in Semiconductor Multilayers, Cambridge University Press, Cambridge, 1997.
179. P. Kinsler,', Private communication.
180. T. Piorek, Aspects of low-dimensional diluted semimagnetic structures, Ph.D. thesis, University of Hull, 1996.
181. S.-H. Park, D. Ann, and Y.-T. Lee, 'Screening effects on electron-longitudinal opticalphonon intesubband scattering in wide quantum well and comparison with experiment', Jpn. J. Appl. Phys., 39:6601, 2000.
182. B. K. Ridley, 'Electron-hybridon interaction in a quantum well', Phys. Rev. B, 47:4592, 1993.
183. E. Molinari, C. Bungaro, M. Gulia, P. Lugli, and H. Rucker, 'Electron-phononinteractions in two-dimensional systems: a microscopic approach', Semicond. Sci. Technol., 7:B67, 1992.
184. P. Kinsler, R. W. Kelsall, and P. Harrison, 'Interface phonons in asymmetric quantum well structures', Superlatt. Microstruct., 25:163-166, 1999.
185. R. L. Liboff, Introductory Quantum Mechanics, Holden-Day, San Francisco, 1980.
186. P. Kinsler, P. Harrison, and R. W. Kelsall, 'Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission', Phys. Rev. B, 58:4771-4778, 1998.
187. S. M. Goodnick and P. Lugli, 'Effect of electron-electron scattering on non-equilibrium transport in quantum well systems', Phys. Rev. B, 37:2578, 1988.
188. J. H. Smet, C. G. Fonstad, and Q. Hu, 'Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources', J. Appl. Phys., 79:9305, 1996.
189. J. M. Ziman, Electrons and Phonons, Oxford, Oxford, 1960.
190. N. Takenaka, M. Inoue, and Y. Inuishi, 'Influence of inter-carrier scattering on hot electron distribution function in GaAs', J. Phys. Soc. Japan, 47:861, 1979.
191. M. Mosko, A. Moskova, and V. Cambel, 'Carrier-carrier scattering in photoexcited intrinsic GaAs quantum wells and its effect on femtosecond plasma thermalisation', Phys. Rev. B, 51:16860, 1995.
192. P. Harrison and R. W. Kelsall, 'The relative importance of electron-electron and electronphonon scattering in terahertz quantum cascade lasers', Solid State Electronics, 42:1449-1451, 1998.
193. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, 'Long wavelength infrared (λ =11 μm) quantum cascade lasers', Appl. Phys. Lett., 69:2810, 1996.
194. T. Ando, A. B. Fowler, andF. Stern, 'Electronic properties of two-dimensional systems', Rev. Mod. Phys., 54:437, 1982.
195. P. F. Maldague, 'Many-body corrections to the polarizability of the two-dimensional electron gas', Surf. Sci., 73:296, 1978.
196. P. Kinsler, P. Harrison, and R. W. Kelsall, 'Intersubband terahertz lasers using four-level asymmetric quantum wells', J. Appl. Phys., 85:23-28, 1999.
197. K. Donovan, P. Harrison, and R. W. Kelsall, 'Stark ladders as tunable far-infrared emitters', J. Appl. Phys., 84:5175-5179, 1998.
198. P. S. Zory, Quantum Well Lasers, Academic Press, Boston, 1993.
199. D. D. Coon and R. P. G. Karunasiri, 'New mode of infrared detection using quantum wells', Appl. Phys. Lett., 45:649, 1984.
200. W. T. Tsang, Ed., Lightwave Communications Technology, vol. 22 of Semiconductors and semimetals, Academic Press, Orlando, 1985.
201. P. N. J. Dennis, Photodetectors : An Introduction to Current Technology, Updates in applied physics and electrical technology. Plenum Press, New York, 1986.
202. M. A. Trishenkov, Detection of Low-Level Optical Signals : Photodetectors, Focal Plane Arrays and Systems, vol. 4 of Solid-state science and technology library, Kluwer Academic Publisher, Boston, 1997.
203. A. N. Baranov, V. V. Sherstnev, C. Alibert, and A. Krier, 'New III-V semiconductor lasers emitting near 2.6 um', J. Appl. Phys., 79:3354, 1996.
204. R. L. Gunshor and A. V. Nurmikko, Eds., II-VI Blue/Green Light Emitters: Device Physics and Epitaxial Growth, Academic Press, San Diego, 1997.
205. E. L. Ivchenko and G. Pikus, Superlattices and other Heterostructures: Symmetry and Optical Phenomena, Springer-Verlag, Berlin, Second edition, 1995.
206. B. K. Ridley, Quantum Processes in Semiconductors, Clarendon, Oxford, Third edition, 1993.
207. L. C. West and S. J. Eglash, 'First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well', Appl. Phys. Lett., 46:1156, 1985.
208. D. Kaufman, A. Sa'ar, and N. Kuze, 'Anisotropy, birefringence, and optical-phase retardation related to intersubband transitions in multiple-quantum-well structures', Appl. Phys. Lett., 64:2543, 1994.
209. V. Berger, 'Three-level laser based on intersubband transitions in asymmetric quantum wells: a theoretical study', Semicond. Sci. Technol, 9:1493, 1994.
210. F. H. Julien, Z. Moussa, P. Boucaud, Y. Lavon, A. Sa'ar, J. Wang, J. P. Leburton, V. Berger, J. Nagle, and R. Planel, 'Intersubband mid-infrared emission in optically pumped quantum wells', Superlatt. Microstruct., 19:69, 1996.
211. J. Katz, Y. Zhang, and W. I. Wang, 'Normal incidence infra-red absorption from intersubband transitions in p-type GalnAs/AHnAs quantum wells', Electronics Letters, 28:932, 1992.
212. W. Batty and K. A. Shore, 'Normal-incidence TE inter-subband transitions', lEEProc.-Optoelectron., 145:21, 1998.
213. M. J. Burt, 'The evaluation of the matrix element for interband optical-transitions in quantum-wells using envelope functions', J. Phys.:Cond. Matter, 5:4091, 1993.
214. D. T. F. Marple, 'Refractive index of ZnSe, ZnTe, and CdTe', J. Appl. Phys., 35:539, 1964.
215. B. O. Seraphin and H. E. Bennett, Semiconductors and Semimetals, vol. 3, p. 499, Academic, New York, 1967.
216. P. Harrison, R. W. Kelsall, P. Kinsler, and K. Donovan, 'Quantum well intersubband transitions as a source of terahertz radiation', in 1998 IEEE sixth international conference on Terahertz electronics proceedings, P.Harrison, Ed., 1998, pp. 74-78.
217. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, 'Quantum cascade laser', Science, 264:553, 1994.
218. C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, 'Mid-infrared (8.5 mu m) semiconductor lasers operating at room temperature', IEEE Photonics Technology Letters, 9:294-296, 1997.
219. M. Rochat, J. Faist, M. Beck, U. Oesterle, and M. Ilegems, 'Far-infrared (A=88 um) electroluminescence in a quantum cascade structure', Appl. Phys. Lett., 73:3724, 1998.
220. U. Bockelmann and G. Bastard, Thonon scattering and energy relaxation in two, one and zero-dimensional electron gases', Phys. Rev. B, 42:8947, 1990.
221. L. Zheng and S. DasSarma, 'Inelastic lifetimes of confined two-component electron systems in semiconductor quantum-wire and quantum-well structures', Phys. Rev. B, 54:13908, 1996.
222. E. H. Hwang and S. DasSarma, 'Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures', Superlatt. Microstruct., 21:1, 1997.
223. C. R. Bennett and B. Tanatar, 'Energy relaxation via confined and interface phonons in quantum-wire systems', Phys. Rev. B, 55:7165, 1997.
224. M. Brasken, M. Lindberg, and J. Tulkki, 'Carrier dynamics in strain-induced quantum dots', Physica Status Solidi A, 164:427, 1997.
225. K. Kral and Z. Khas, 'Electron self-energy in quantum dots', Phys. Rev. B, 57:R2061, 1998.
226. J. M. Luttinger and W. Kohn, 'Motion of electrons and holes in perturbed periodic fields', Phys. Rev., 97:869, 1955.
227. C. R. Pidgeon and R. N. Brown, 'Interband magneto-absorption and Faraday rotation in InSb', Phys. Rev., 146:575, 1966.
228. B. A. Foreman, 'Effective-mass Hamiltonian and boundary conditions for the valence bands of semiconductor microstructures', Phys. Rev. B, 48:4964, 1993.
229. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, 'Band parameters for III-V compound semiconductors and their alloys', J. Appl. Phys., 89:5815, 2001.
230. A. Kahan, M. Chi, and L. Friedman, ', J. Appl. Phys., 75:8012, 1994.
231. C. Y. P. Chao and S. L. Chuang, 'Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells', Phys. Rev. B, 46:4110, 1992.
232. B. Chen, M. Lazzouni, and L. R. Ram-Mohan, 'Diagonal representation for the transfer matrix method for obtaining electronic energy levels in layered semiconductor heterostructures', Phys. Rev. B, 45:1204, 1992.
233. E. Anderson, Z. Bai, C. Bischof, J. Demmel, J. Dongarra, J. Du Croz, A. Greenbaum, S. Hammarling, A. McKenney, S. Ostrouchov, and D. Sorensen, LAPACK Users' Guide, Society for Industrial and Applied Mathematics, Philadelphia, Second edition, 1995.
234. W. A. Harrison, Pseudopotentials in the Theory of Metals, W. A. Benjamin, New York, 1966.
235. M. Jaros, Deep Levels in Semiconductors, Hilger, Bristol, 1982.
236. M. L.Cohen and T. K. Bergstresser, 'Band structures and pseudopotential form factors for fourteen semiconductors of the diamond and zinc-blende structures', Phys. Rev., 141:789, 1966.
237. G. Weisz, 'Band structure and Fermi surface of white tin', Phys. Rev., 149:504, 1966.
238. S. Bloom and T. K. Bergstresser, 'Band structure of a-Sn, InSb and CdTe including spin-orbit effects', Solid State Commun., 6:465, 1970.
239. S. Adachi, Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and lnGaAsP, Wiley, New York, 1992.
240. L. A. Coldren and S. W. Corzine, Diode Laser and Photonic Integrated Circuits, Wiley, New York, 1995.
241. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, 'Superbright green InGaN single-quantum-well-structure light-emitting-diodes', Jpn. J. Appl. Phys. Part 2, 34:Ll332, 1995.
242. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, 'Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K', Appl. Phys. Lett., 69:3034, 1996.
243. S. Nakamura, 'Characteristics of room temperature-CW operated InGaN multi-quantumwell-structure laser diodes', Materials Research Society J. of Nitride Semicond. Research, 2:5, 1997.
244. Y. C. Yeo, T. C. Chong, and M. F. Li, 'Electronic band structures and effective mass parameters of wurtzite GaN and InN', J. Appl. Phys., 83:1429, 1998.
245. S. C. Jain, Germanium-Silicon Strained Layers and Heterostructures, Advances in electronics and electron physics. Academic Press, Boston, 1994.
246. An-Ban Chen and Arden Sher, Semiconductor Alloys: Physics and Materials Engineering, Plenum, New York, 1995.
247. G. P. Strivastava, J. L. Martins, and A. Zunger, 'Atomic structure and ordering in semiconductor alloys', Phys. Rev. B, 31:2561, 1985.
248. S.-H. Wei and A. Zunger, 'Band gap narrowing in ordered and disordered semiconductor alloys', Appl. Phys. Lett., 56:662, 1990.
249. S.-H. Wei and A. Zunger, 'Optical properties of zinc blende alloys: Effects of epitaxial strain and atomic ordering', Phys. Rev. B, 49:14337, 1994.
250. J. P. Walter and M. L. Cohen, 'Calculated and Measured Reflectivity of ZnTe and ZnSe', Phys. Rev. B, 1:2661, 1970.
251. J. R. Chelikowsky and M. L. Cohen, 'Nonlocal pseudopotential calculations for the electronic structure of eleven zinc-blende semiconductors', Phys. Rev. B, 14:556, 1976.
252. S. Bloom and T. K. Bergstresser, 'Band structure of a-Sn, InSb and CdTe including spin-orbit effects', Solid State Communications, 6:465, 1968.
253. K. A. Mader and A. Zunger, 'Empirical atomic pseudopotentials for AlAs/GaAs superlattices, alloys, and nanostructures', Phs. Rev. B, 50:17393, 1994.
254. F. Herman and S. Skillman, Atomic Structure Calculations, Prentice-Hall, Englewood Cliffs, N.J., 1963.
255. P. Friedel, M. S. Hybertsen, and M. Schluter, 'Local empirical pseudopotential approach to the optical properties of Si/Ge superlattices', Phys. Rev. B, 39:7974, 1989.
256. T. Mattila, L.-W. Wang, and A. Zunger, 'Electronic consequences of lateral modulation in semiconductor alloys', Phys. Rev. B, 1999, BY6515 accepted.
257. B. S. Meyerson, 'High-speed Silicon-Germanium electronics', Scientific American, 3:42, 1994.
258. I. Morrison, M. Jaros, and K. B. Wong, 'Stain-induced confinement in Si0.75Ge0.25 (Si/Si0.5Ge0.5) (001) superlattice systems', Phys. Rev. B, 35:9693, 1987.
259. G. C. Osbourn, 'Strained-layer superlattices from lattice mismatched materials', J. App. Phys., 53:1586, 1982.
260. J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, and I. K. Robinson, 'GexSi1_x/Si strained layer superlattices grown by molecular beam epitaxy', J. Vac. Sci. Technol. A, 2:436, 1984.
261. E. Kasper, H. J. Herzog, and F. Schaffler, 'Si/Ge multilayer structures', in Physics, fabrication and applications of multilayer structures, P. Dhez and C. Weisbuch, Eds., New York, 1988, NATO ASI, vol. 182 of B, Physics, p. 229, Plenum.
262. I. J. Fritz, S. T. Picraux, L. R. Dawson, T. J. Drummond, W. D. Laidig, and N. G. Anderson, 'Dependence of critical layer thickness on strain for InxGa1-xAs/GaAs strained layer superlattices', Appl. Phys. Lett., 46:967, 1985.
263. R. L. Ross, S. P. Svensson, and P. Lugli, Eds., Pseudomorphic HEMT Technology and Applications, vol. 309 of NATO ASI, E, Kluwer Academic, Dordrecht; London, 1996.
264. M. A. Gell, D. Ninno, M. Jaros, and D. C. Herbert, 'Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-AlxGa1-xAs (001) superlattices', Phys. Rev. B, 34:2416, 1986.
265. S. Tarucha, D. G. Austing, T. Honda, R. van der Hage, and L. P. Kouwenhoven, 'Atomiclike properties of semiconductor quantum dots', Jpn. J. Appl. Phys., 36:3917, 1997.
266. P. Harrison, 'Proposal for neutral donors in quantum wells to act as charge storage centres for room temperature single electron memories', in The Proceedings of the 6th International Symposium on Nanostructures: Physics and Technology, 1998, pp. 237-240.
267. M. P. Halsall, P. Harrison, H. Pellemans, and C. R. Pidgeon, 'Free-electron laser studies of intra-acceptor transitions in GaAs: a potential far-infrared emission system', in Terahertz spectroscopy and applications, J. M. Chamberlain, Ed. SPIE, 1999, vol. 3617, pp. 171-176.
268. R. J. Turton and M. Jaros, 'Effects of interfacial ordering on the optical properties of Si-Ge superlattices', Semicond. Sci. Technol., 8:2003, 1993.
269. L.-W. Wang and A. Zunger, 'Solving Schrodinger's equation around a desired energy: Application to silicon quantum dots', J. Chem. Phys., 100:2394, 1994.
270. L.-W. Wang, A. Franceschetti, and A. Zunger, 'Million-atom pseudopotential calculation of F-X mixing in GaAs/AlAs superlattices and quantum dots', Phys. Rev. Lett., 78:2819, 1997.
271. L. W. Wang, J. N. Kim, and A. Zunger, 'Electronic structures of [110]-faceted selfassembled pyramidal InAs/GaAs quantum dots', Phys. Rev. B, 59, 1999.
272. H. Ueno, K. Moriyasu, Y. Wada, S. Osako, H. Kubo, N. Mori, and C. Hamaguchi, 'Conductance through laterally coupled quantum dots', Jpn. J. Appl. Phys. Part 1, 38:332, 1999.
273. T. Ando, S. Uryu, S. Ishizaka, and T. Nakanishi, 'Quantum transport in anti-dot lattices', Chaos solitons and fractals, 8:1057, 1997.
274. V. Y. Demikhovskii and A. A. Perov, 'Electron states in quantum-dot and antidot arrays placed in a strong magnetic field', Physics of the solid state, 6:1035, 1998.
275. P. D. Tougaw and C. S. Lent, 'Dynamic behavior of quantum cellular automata', J. Appl. Phys., 80:4722, 1996.
276. C. K. Wang, I.I. Yakimenko, I. V. Zozoulenko, and K. F. Berggren, 'Dynamical response in an array of quantum-dot cells', J. Appl. Phys., 84:2684, 1998.
277. M. Hirasawa, S. Katsumoto, A. Endo, and Y. lye, 'Coulomb blockade in arrays of quantum dots', Physica B, 251:252, 1998.