High-power infrared (8-micrometer wavelength) superlattice lasers

Science

Volumn 276, Issue 5313, 1997, Pages 773-776

  Scamarcio, Gaetano ^a,b   Capasso, Federico ^a   Sirtori, Carlo ^a,c   Faist, Jerome ^a   Hutchinson, Albert L ^a   Sivco, Deborah L ^a   Cho, Alfred Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF BARI   (Italy)

^c THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; ELECTRONS; ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

INFRARED LASERS; OPTICAL TRANSITION; WAVELENGTH;

HIGH POWER LASERS;

ARTICLE; ELECTRON; INFRARED RADIATION; LASER; PRIORITY JOURNAL; SEMICONDUCTOR; SPECTRAL SENSITIVITY;

EID: 0031547954     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.276.5313.773     Document Type: Article

References (24)

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24. We are grateful to C. Gmachl for many useful discussions.