Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures

Superlattices and Microstructures

Volumn 21, Issue 1, 1997, Pages 1-5

  Hwang, E H ^a   Das Sarma, S ^a  

^a Bldg 142   (United States)

Author keywords

Doped GaAs quantum wire; Electron phonon and electron electron interactions; Inelastic scattering rate; Plasmon phonon coupling

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; ELECTRONS; NANOSTRUCTURED MATERIALS; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CONFINEMENT SIZE; DYNAMICAL SCREENING APPROXIMATION; ELECTRON PHONON INTERACTION; ELECTRON-ELECTRON INTERACTION; HOT ELECTRON INELASTIC MEAN FREE PATHS; INELASTIC SCATTERING RATE; NANOSTRUCTURES; PLASMON PHONON COUPLING; QUASIPARTICLE DAMPING RATES; RANDOM PHASE APPROXIMATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 30244515410     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0133     Document Type: Article

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