Inelastic lifetimes of confined two-component electron systems in semiconductor quantum-wire and quantum-well structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 19, 1996, Pages 13908-13914

  Zheng, Lian ^a   Das Sarma, S ^a  

^a Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000568054     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.13908     Document Type: Article

References (40)

1. S.Q. Murphy, J.P Eisenstein, L.N. Pfeiffer and K.W. West, Phys. Rev. B 52, 14t825 (1995).
2. V. Chabasseur-Molyneux et. al Phys. Rev. B 51, 13t793 (1995).
3. P. Lee and T.V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985), and references therein.
4. C.G. Olson et. al Phys. Rev. B 42, 381 (1990).
5. S. Martin et. al Phys. Rev. Lett. 60, 2194 (1988).
6. A.R. Gõni et. al Phys. Rev. Lett. 67, 3298 (1991).
7. See, for example, Nanostructure Physics and Fabrication, edited by M.A. Reed and W.P. Kirk (Academic, Boston, 1989).
8. Nanostructures and Mesoscopic Systems, edited by W.P. Kirk and M.A. Reed (Academic, Boston, 1992).
9. C.W.J. Beenakker and H. van Houten, Solid State Phys. 44, 1 (1991).
10. C. Weisbuch and B. Vinter, Quantum Semiconductor Structures (Academic, San Diego, 1991).
11. H. Sakaki, Jpn. J. Appl. Phys. 19, L735 (1980).
12. D.A.B. Miller et. al Appl. Phys. Lett. 52, 2154 (1988).
13. S. Briggs, D. Javanovic and J.P. Leburton, Appl. Phys. Lett. 54, 2012 (1989).
14. S. Tomonaga, Prog. Theor. Phys. (Kyoto) 5, 544 (1950).
15. J.M. Luttinger, J. Math. Phys. 4, 1154 (1963).
16. D.C. Mattis and E.H. Lieb, J. Math. Phys. 6, 304 (1965).
17. A. Luther and I. Peschel, Phys. Rev. B. 9, 2911 (1974).
18. F.D.M. Haldane, J. Phys. C 14, 2585 (1981).
19. B. Yu-Kuang Hu and S. Das Sarma, Phys. Rev. B 48, 5469 (1992).
20. E.H. Hwang and S. Das Sarma, Phys. Rev. B 50, 17t267 (1994).
21. G.F. Giuliani and J.J. Quinn, Phys. Rev. B 26, 4421 (1982).
22. C. Hodges, H. Smith and J.W. Wilkins, Phys. Rev. B 4, 302 (1971).
23. H. Fukuyama and E. Abrahams, Phys. Rev. B 27, 5976 (1983).
24. A.V. Chaplik, Zh. Éksp. Teor. Fiz. 60, 1845 (1971) [Sov. Phys. JETP 33, 997 (1971)];
25. G. Fasol, Appl. Phys. Lett. 59, 2430 (1991).
26. P. Hawrylak, G. Eliasson and J.J. Quinn, Phys. Rev. B 37, 10t187 (1988).
27. Lian Zheng and S. Das Sarma, Phys. Rev. B 53, 9964 (1996).
28. T. Jungwirth and A.H. MacDonald, Phys. Rev. B 53, 7403 (1996).
29. S. Das Sarma and A. Madhukar, Phys. Rev. B 23, 805 (1981).
30. S. Das Sarma and J.J. Quinn, Phys. Rev. B 25, 7603 (1982).
31. Y.M. Malozovsky, S.M. Bose and P. Longe, Phys. Rev. B 47, 15t242 (1993).
32. S. Xu et. al Phys. Rev. Lett. 76, 483 (1996).
33. J.J. Quinn and R.A. Ferrell, Phys. Rev. 112, 812 (1958).
34. L. Hedin, Phys. Rev. 139, A796 (1965).
35. The neglect of intersubband (or interlayer) scattering terms ought to be an excellent approximation for semiconductor-based electron systems. This is because at long wavelengths wave-function orthogonality between the two components ensures the vanishing of the intersubband Coulomb matrix elements and at short wavelengths the matrix elements are small due to the long-range nature of Coulomb scattering. In general, the intersubband off-diagonal self-energy contribution is negligibly small in a two-component system (for example, two subbands/layers as considered by us) by virtue of the smallness of the intersubband Coulomb interaction matrix elements. This was originally pointed out a long time ago in the context of two-dimensional Si inversion layer systems [see, for example, S. Das Sarma et. al Phys. Rev. B 19, 6397 (1979).
36. K. Nakamura et. al Phys. Rev. B 22, 1892 (1980)], and should be even more true for a two-subband quantum-wire system because the one-dimensional subbands arise from quantum confinement in two directions. For many occupied subbands in quantum wires (wells) one expects the off-diagonal components of self-energy to have an increasing quantitative significance because the self-energy would approach the corresponding two- (three-) dimensional limit due to the contributions from the off-diagonal terms. Current computational resources, however, do not allow one to carry out a Coulomb self-energy calculation of the type being done in this paper for an N-subband system because the N×N self-energy matrices in the presence of off-diagonal intersubband transitions involve bare Coulomb interaction matrices which are (Formula presented)×(Formula presented) in dimensions, and are nonsparse.
37. Lian Zheng and A.H. MacDonald, Phys. Rev. B 49, 5522 (1994).
38. B. Vinter, Phys. Rev. Lett. 35, 1044 (1975).
39. S. Das Sarma and W.Y. Lai, Phys. Rev. B 32, 1401 (1985).
40. R. Shankar, Rev. Mod. Phys. 66, 129 (1994), and references therein.