Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 294-296

  Sirtori, Carlo ^a,b   Faist, Jérôme ^a   Capasso, Federico ^a   Sivco, Deborah L ^a   Hutchinson, Albert L ^a   Cho, Alfred Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TUNNELING; LIGHT EMISSION; LIGHT SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

BOSE-EINSTEIN FACTOR; NEAR RESONANT OPTICAL PHONON EMISSION; THRESHOLD CURRENT DENSITY; VERTICAL CASCADE TRANSITION QUANTUM CASCADE LASER;

SEMICONDUCTOR LASERS;

EID: 0031103070     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556051     Document Type: Article

References (9)

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