Incomplete ionization in a semiconductor and its implications to device modeling

Microelectronics Reliability

Volumn 39, Issue 8, 1999, Pages 1299-1303

  Xiao, G ^a   Lee, J ^a   Liou, J J ^a   Ortiz Conde, A ^b  

^a University of Central Florida   (United States)

^b UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; IONIZATION; SEMICONDUCTOR DEVICE MODELS;

FREE CARRIERS;

SEMICONDUCTOR MATERIALS;

EID: 0033339051     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00027-X     Document Type: Article

References (7)

1. Sze S.M. Physics of Semiconductor Devices. 2nd ed. 1981;Wiley, New York.
2. Li S.S. Semiconductor Physical Electronics. 1993;Plenum, New York.
3. Shur M. Physics of Semiconductor Devices. 1990;Prentice-Hall, Englewood Cliffs, NJ.
4. Wolfe C.M., Holonyak N. Jr, Stillman G.E. Physical Properties of Semiconductors. 1989;Prentice-Hall, Englewood Cliffs, NJ.
5. Pierret R.F. Semiconductor Device Fundamentals. 1996;Addison Wesley, New York.
6. Liou J.J. Advanced Semiconductor Device Physics and Modeling. 1994;Artech House, Boston, MA.
7. ATLAS Manual. 1996;Silvaco International.