Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1022-1025

  Harrison, P ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCULATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ENERGY ABSORPTION; EXCITONS; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

EXCITON ENERGY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030190450     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/008     Document Type: Article

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