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Solid State Communications

Volumn 179, Issue , 2014, Pages 34-38

Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN

(5) Rajagopal Reddy, V a,b Janardhanam, V b Ju, Jin Woo c Yun, Hyung Joong b,d Choi, Chel Jong b

a SRI VENKATESWARA UNIVERSITY (India)

b Chonbuk National University (South Korea)

c Korea Photonics Technology Institute (KOPTI) (South Korea)

d Korea Basic Science Institute (KBSI) (South Korea)

Author keywords

A. Se Schottky contact; B. Microstructure; C. High Schottky barrier; D. Current transport mechanism

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER TRANSPORT MECHANISMS; CURRENT CONDUCTION MECHANISMS; CURRENT TRANSPORT MECHANISM; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY EMISSION MECHANISM;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84889062678 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2013.11.011 Document Type: Article

Times cited : (12)

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