Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN

Materials Chemistry and Physics

Volumn 130, Issue 3, 2011, Pages 1000-1006

  Reddy, N Nanda Kumar ^a   Reddy, V Rajagopal ^a   Choi, Chel Jong ^b  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b Chonbuk National University   (South Korea)

Author keywords

Annealing; Electrical properties; n type GaN; Nitrides; Pd Ru Schottky contacts; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

AFM; ANNEALING TEMPERATURES; BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CORE-LEVEL SHIFT; CURRENT VOLTAGE; ELECTRICAL AND STRUCTURAL PROPERTIES; HIGH-TEMPERATURE DEVICES; LOW ENERGIES; N-TYPE GAN; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; THERMAL ANNEALING EFFECTS; XRD;

DIFFRACTION; ELECTRONS; GALLIUM NITRIDE; PHASE INTERFACES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 80054050811     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.08.026     Document Type: Article

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