Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 11, 2013, Pages 2399-2403

  Schwab, Christoph ^a   Hofmann, Marc ^a   Heller, Rene ^b   Seiffe, Johannes ^a   Rentsch, Jochen ^a   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

hydrogen; silicon; silicon nitride; silicon oxynitride; surface passivation

Indexed keywords

CRYSTALLINE SILICON SURFACES; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; HIGH TEMPERATURE TREATMENTS; HIGH-TEMPERATURE TREATMENT; PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITIONS; SILICON NITRIDE CAPPING LAYER; SILICON OXYNITRIDES; SURFACE PASSIVATION;

AMORPHOUS SILICON; HYDROGEN; INFRARED SPECTROSCOPY; MOLECULAR PHYSICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

SILICON NITRIDE;

EID: 84888372022     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201329308     Document Type: Article

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