The diffusion of ion implanted hydrogen in amorphous Si3N 4:H films

Journal of Physics Condensed Matter

Volumn 16, Issue 24, 2004, Pages 4233-4244

  Schmidt, H ^a   Gruber, W ^a   Borchardt, G ^a   Bruns, M ^b   Rudolphi, M ^c   Baumann, H ^c  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; ION IMPLANTATION; MAGNETRONS; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; THIN FILMS;

DIFFUSIVITIES; FILM DEFECTS; TRACER ATOMS;

HYDROGEN;

EID: 3042848369     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/24/005     Document Type: Article

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