Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Solar Energy Materials and Solar Cells

Volumn 96, Issue 1, 2012, Pages 173-179

  Hallam, Brett ^a   Tjahjono, Budi ^a   Wenham, Stuart ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

FTIR spectroscopy; Passivation; PECVD; Silicon oxynitride

Indexed keywords

FLOAT ZONE SILICON; FTIR SPECTROSCOPY; MINORITY CARRIER LIFETIMES; NON-DIFFUSED SURFACE; OXYGEN INCORPORATION; P-TYPE SUBSTRATES; SILICON OXYNITRIDE; SILICON OXYNITRIDE FILMS; SILICON OXYNITRIDES; SURFACE PASSIVATION; THERMAL-ANNEALING; WAVE NUMBERS;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPEN CIRCUIT VOLTAGE; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

SILICON WAFERS;

EID: 80855132091     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.09.052     Document Type: Article

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