Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications

Solar Energy Materials and Solar Cells

Volumn 108, Issue , 2013, Pages 180-188

  Brinkmann, Nils ^a   Sommer, Daniel ^a   Micard, Gabriel ^a   Hahn, Giso ^a   Terheiden, Barbara ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Amorphous silicon oxynitride; Surface passivation; Wide band gap heterojunctions

Indexed keywords

A-SI:H; ABSORBANCES; AMORPHOUS NETWORKS; CRYSTALLINE SI; DARK CONDUCTIVITY; DEPOSITION PARAMETERS; DOPED FILMS; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; FTIR; LOW TEMPERATURES; MINORITY CARRIER LIFETIMES; N-TYPE DOPING; NITROGEN CONCENTRATIONS; NITROUS OXIDE; P-TYPE DOPING; PHOTOVOLTAIC APPLICATIONS; PLASMA DECOMPOSITION; SI-O-SI BOND; SILICON OXYNITRIDE FILMS; SILICON OXYNITRIDES; SOLAR-CELL APPLICATIONS; SPECTRAL ELLIPSOMETRY; STRUCTURAL INVESTIGATION; SURFACE PASSIVATION; TEMPERATURE-DEPENDENT CONDUCTIVITY; WIDE BAND GAP;

AMORPHOUS FILMS; AMORPHOUS SILICON; DEPOSITS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; NITROGEN OXIDES; OPEN CIRCUIT VOLTAGE; OPTICAL BAND GAPS; OXYGEN; SILICON; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

SEMICONDUCTOR DOPING;

EID: 84867591838     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.09.025     Document Type: Conference Paper

References (44)

1. A. Aberle Crystalline Silicon Solar Cells - Advanced Surface Passivation and Analysis 1999 UNSW Sydney p. 13-46
2. S. Dauwe, J. Schmidt, R. Hezel, Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films, in: Proceedings of the 29th IEEE PVSC, 2002, p. 1246.
3. M. Schaper, J. Schmidt, H. Plagwitz, and R. Brendel 20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation Progress in Photovoltaics: Research and Applications 13 2005 381 386
4. T. Kinoshita, D. Fujishima, A. Yano, A. Ogane, S. Tohoda, K. Matsuyama, Y. Nakamura, N. Tokuoka, H. Kanno, H. Sakata, M. Taguchi, E. Maruyama, The approaches for high efficiency HITTM solar cell with very thin (<100 μm) silicon wafer over 23%, in: Proceedings of the 26th EUPVSEC, 2011, p. 871.
5. S. Taira, Y. Yoshimine, T. Baba, M. Taguchi, H. Kanno, T. Kinoshita, H. Sakata, E. Maruyama, M. Tanaka, Our approaches for achieving HIT solar cells with more than 23% efficiency, in: Proceedings of the 22nd EUPVSEC, 2007, p. 932.
6. H. Plagwitz, Surface Passivation of Crystalline Silicon Solar Cells by Amorphous Silicon Films, Ph.D. Thesis, G.W. Leibniz University of Hannover, 2007.
7. R.A. Street Hydrogenerated Amorphous Silicon 1990 Cambridge University Press Cambridge p. 83-88
8. S. Janz, Amorphous Silicon Carbide for Photovoltaic Applications, Ph.D. Thesis, University of Konstanz, 2006.
9. F. Demichelis, C.F. Pirri, E. Tresso, G. Della Mea, V. Rigato, and P. Rava Physical properties of undoped and doped hydrogenated amorphous silicon carbide Semiconductor Science and Technology 6 1991 1141 1146
10. D. Pysch, M. Bivour, M. Hermle, and S.W. Glunz Amorphous silicon carbide heterojunction solar cells on p-type substrates Thin Solid Films 519 2011 2550 2554
11. T. Mueller, S. Schwertheim, and W.R. Fahrner Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications Journal of Applied Physics 107 2010 014504-1 014504-11
12. S. Olibet, E. Vallat-Sauvain, and C. Ballif Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds Physical Review B 76 2007 035326-1 035326-14
13. W. Shockley, and W.T. Read Statistics of the recombinations of holes and electrons Physical Review 87 1952 835 842
14. R.N. Hall Electron-hole recombination in germanium Physical Review 87 1952 387
15. H. Plagwitz, B. Terheiden, and R. Brendel Staebler-Wronski like formation of defects at the amorphous-silicon-crystalline silicon interface during illumination Journal of Applied Physics 103 2008 094506-1 094506-4
16. x:H Physical Review B 69 2004 115206-1 115206-16
17. T. Mueller, S. Schwertheim, K. Meusinger, B. Wdowiak, R. Klimkeit, W.R. Fahrner, Application of plasma deposited nanocomposite silicon suboxides and microcrystalline silicon alloys to heterojunction solar cells, in: Proceedings of the 34th IEEE-PVSC, 2009, p. 2378.
18. y films Thin Solid Films 402 2002 154 161
19. W.L. Scopel, R.R. Cuzinatto, M.H. Tabacniks, M.C.A. Fantini, M.I. Alayo, and I. Pereyra Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition Journal of Non-Crystalline Solids 288 2001 88 95
20. x:H films Journal of Non-Crystalline Solids 195 1996 72 75
21. A. Laades, M. Blech, H.C. Biank, C. Maier, M. Roczen, C. Leschinski, H. Strutzberg, A. Lawrenz, Fundamental study of silicon oxynitrides for photovoltaic applications, in: Proceedings of the 26th EUPVSEC, 2011, p. 1653.
22. M. Junghänel, M. Schädel, L. Stolze, S. Peters, Black multicrystalline solar modules using novel multilayer antireflection stacks, in: Proceedings of the 5th WCPEC, 2010, p. 2637.
23. F.A. Bogenschuezt Aetzpraxis fuer Halbleiter 1967 Hanser München p. 67-68
24. W. Kern The evolution of silicon wafer cleaning technology Journal of the Electrochemical Society 137 1990 1892
25. R.A. Sinton, and A. Cuevas Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Applied Physics Letters 69 1996 2510 2512
26. A.B. Sproul Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors Journal of Applied Physics 76 1994 2851 2854
27. M. Fox Optical Properties of Solids 2010 Oxford University Press Oxford p. 44-46
28. J. Tauc, and A. Menth States in the gap Journal of Non-Crystalline Solids 8 1972 569 585
29. Y. Lubianiker, and I. Balberg Two Meyer-Neldel rules in porous silicon Physical Review Letters 78 1997 2433 2436
30. D. Suwito, Intrinsic and Doped Amorphous Silicon Carbide Films for the Surface Passivation of Silicon Solar Cells, Ph.D. Thesis, University of Konstanz, 2011.
31. A.A. Langford, M.L. Fleet, B.P. Nelson, W.A. Landford, and N. Maley Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon Physical Review B 45 1992 13367 13377
32. D. Schroder Semiconductor Material and Device Characterization 2006 John Wiley and Sons Hoboken, New Jersey p. 102-103
33. S. De Wolf, B. Demaurex, A. Descoeudres, and C. Ballif Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces Physical Review B 83 2011 233301 233304
34. T.F. Schulze, H.N. Beushausen, C. Leendertz, A. Dobrich, and B. Rech Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions Applied Physics Letters 96 2010 252102 252103
35. G. Lucovsky, J. Yang, S.S. Chao, J.E. Tyler, and W. Czubatyj Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films Physical Review B 28 1983 3225 3233
36. r:H (0
37. G.N. Parsons, and G. Lucovsky Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon-nitrogen alloys Physical Review B 41 1990 1664 1667
38. G. Lucovsky, Z. Jing, P. Santos-Filho, G. Stevens, and A. Banerjee Nearest-neighbor repulsion-perturbed silicon monohydride bond-stretching vibrations in hydrogenated and deuterated silicon nitrogen alloy films Journal of Non-Crystalline Solids 198 1996 19 23
39. A. Cuevas, and R.A. Sinton Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance Progress in Photovoltaics: Research Applications 5 1997 79 90
40. S. De Wolf, and M. Kondo Nature of doped a-Si:H/c-Si interface recombination Journal of Applied Physics 105 2009 103707-1 103707-6
41. R. Brendel, SUNRAYS: a versatile ray tracing program for the photovoltaic community, in: Proceedings of the 12th EUPVSEC, 1994, p. 1339
42. Z.C. Holman, A. Descoeudres, L. Barraud, F.Z. Fernandez, J.P. Seif, S. De Wolf, and C. Ballif Current losses at the front of silicon heterojunction solar cells IEEE Journal of Photovoltaics 2 2012 7 15
43. E. Conrad, L. Korte, K. von Maydell, H. Angermann, C. Schubert, R. Stangl, M. Schmidt, Development and optimization of a-Si:H/c-Si heterojunction solar cells completely processed at low temperatures, in: Proceedings of the 21st EUPVSEC, 2006, p. 784.
44. D. Munoz, P.J. Ribeyron, A.S. Ozanne, A. Danel, S. Harrison, N. Nguyen, C. Arnal, S. Martin de Nicolas, F. Souche, G. D'Alonzo, T. Desrues, High efficiency a-Si:H/c-Si heterojunction solar cells development at INES, in: Proceedings of the 1st nPV Workshop. 2011.