Hydrogen in silicon: A discussion of diffusion and passivation mechanisms

Solar Energy Materials and Solar Cells

Volumn 41-42, Issue , 1996, Pages 159-169

  Sopori, B L ^a   Deng, X ^a   Benner, J P ^a   Rohatgi, A ^b   Sana, P ^b   Estreicher, S K ^c   Park, Y K ^c   Roberson, M A ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ALUMINUM; ANNEALING; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DEFECTS; DIFFUSION IN SOLIDS; DISSOCIATION; HYDROGEN; INCLUSIONS; MATHEMATICAL MODELS; PASSIVATION;

DEGREE OF PASSIVATION; HYDROGEN VACANCY COMPLEX FORMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STATIC POTENTIAL ENERGY SURFACES;

SILICON SOLAR CELLS;

EID: 0030169785     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00098-4     Document Type: Article

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