Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Seiffe, Johannes ^a   Gautero, Luca ^a   Hofmann, Marc ^a   Rentsch, Jochen ^a   Preu, Ralf ^a   Weber, Stefan ^b   Eichel, Rüdiger A ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; CAPACITANCE VOLTAGE; CRYSTALLINE SILICONS; DOUBLE LAYERS; ELECTRON PARAMAGNETIC RESONANCE; LIGHT SOAKING; MINORITY CARRIER; OXYNITRIDES; P-TYPE; PASSIVATED SURFACE; PASSIVATION LAYER; PHOTOVOLTAICS; POSITIVE FIELDS; RAPID THERMAL PROCESS; REPRODUCIBILITIES; SHALLOW DONORS; SI-BASED; SILICON OXYNITRIDES; SURFACE PASSIVATION; SURFACE PHOTOVOLTAGES; THERMAL TREATMENT;

CRYSTALLINE MATERIALS; MICROELECTRONICS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL PROCESSING; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 79951841259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544421     Document Type: Article

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