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Volumn 76, Issue 6, 2004, Pages 1161-1213

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXN Y and AlOXNY films: (IUPAC Technical Report)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; NITROGEN; OXIDE; SILICON DERIVATIVE;

EID: 4043181817     PISSN: 00334545     EISSN: None     Source Type: Journal    
DOI: 10.1351/pac200476061161     Document Type: Review
Times cited : (24)

References (186)
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    • Stein, H.J.1
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    • T. Ogawa, M. Kimura, T. Gotyo, Y. Tomo, T. Tsumori. Proc. Soc. Photo-Opt. Instrum. Eng. (SPIE) - International Society for Optical Engineering, 1927/1 (Optical/Laser Microlithography VI) 263 (1993).
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    • Ogawa, T.1    Kimura, M.2    Gotyo, T.3    Tomo, Y.4    Tsumori, T.5
  • 11
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    • th International Conference on Ion and Plasma Assisted Techniques
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    • Speakman, S.P.1    Read, P.M.2    Kiermasz, A.3
  • 73
    • 4043158748 scopus 로고
    • Proc. Symp. Silicon Nitride Silicon Dioxide Thin Insul. Films
    • V. J. Kapoor and R. A. Turi. Proc. Electrochem. Soc. 89-7 (Proc. Symp. Silicon Nitride Silicon Dioxide Thin Insul. Films 1988), 19 (1989).
    • (1988) Proc. Electrochem. Soc. , vol.89 , Issue.7 , pp. 19
    • Kapoor, V.J.1    Turi, R.A.2
  • 82
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    • IFW, Institute of Solid State Analysis and Structural Research, Dresden, Germany, private communications
    • R. Dorka. IFW, Institute of Solid State Analysis and Structural Research, Dresden, Germany, private communications.
    • Dorka, R.1
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    • Private communications
    • E. Mayer. Private communications.
    • Mayer, E.1
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    • International Centre for Diffraction Data, 12 Campus Boulevard, Newton Square, PA, USA
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.