Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 96, Issue 1, 2012, Pages 180-185

  Gatz, S ^a   Dullweber, T ^a   Mertens, V ^a   Einsele, F ^b   Brendel, R ^a,c  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

PERC solar cell; Screen printing; Silicon nitride; Surface passivation

Indexed keywords

BACK SURFACE FIELDS; CAPPING LAYER; CO-FIRING; CONTACT FORMATION; CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SILICONS; CZ SILICON; DOUBLE LAYERS; FIRING STABILITY; FTIR; HIGH TEMPERATURE; HYDROGEN EFFUSION; INJECTION DENSITY; OPTICAL REFLECTANCE; P-TYPE; PASSIVATION LAYER; PERC SOLAR CELL; PHOTOVOLTAIC INDUSTRY; REAR SIDE; SCREEN-PRINTED; SCREEN-PRINTED SOLAR CELLS; SILICON RICH; STABILITY OF SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; LIGHT REFRACTION; PASSIVATION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; SOLAR ENERGY; THERMODYNAMIC STABILITY;

AMORPHOUS SILICON;

EID: 80855134460     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.09.051     Document Type: Article

References (32)

1. A.W. Blakers, A. Wang, A.M. Milne, J. Zhao, and M.A. Green 22.8% efficient silicon solar cell Applied Physics Letters 55 1989 1363 1365
2. S. Dauwe, L. Mittelstädt, A. Metz, and R. Hezel Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells Progress in Photovoltaics: Research and Applications 10 4 2002 271 278 (Pubitemid 34515871)
3. T. Lauinger, A.G. Aberle, R. Hezel, Comparison of direct and remote PECVD silicon nitride films for low-temperature surface passivation of p-type crystalline silicon, in: W. Palz, H.A. Ossembrink, P. Helm (Eds), Proceedings of the 14th European PV Solar Energy Conference 30 June4 July 1997, Barcelona, Spain, 1997, pp. 853856.
4. x-induced surface emitter and bulk defect passivation in p-type silicon solar cells, in: Proceedings of the 31st IEEE Photovoltaic Specialists Conference and Exhibition, 37 January 2005, Orlando, Florida, USA, 2005, pp. 12731276. (Pubitemid 41668016)
5. B. Lenkeit, S. Steckemetz, F. Artuso, and R. Hezel Excellent thermal stability of remote PECVD silicon nitride films for screen-printed bifacial silicon solar cells Solar Energy Materials and Solar Cells 65 2001 317 323
6. R. Hezel, and K. Jäger Low-temperature surface passivation of silicon for solar cells Journal of the Electrochemical Society 136 2 1989 518 523
7. H. Plagwitz, Y. Takahashi, B. Terheiden, R. Brendel, A low-temperature passivation method for diffused phosphorus-as well as boron-emitters, in: J. Poortmans, H. Ossenbrink, E. Dunlop, P. Helm (Eds), Proceedings of the 21st European Photovoltaic Solar Energy Conference and Exhibition, 48 September 2006, Dresden, Germany, WIP Munich, 2006, pp. 688691.
8. T. Lauinger, J. Schmidt, A.G. Aberle, and R. Hezel Record low surface recombination velocities on 1 Ω cm psilicon using remote plasma silicon nitride passivation Applied Physics Letters 68 1996 1232 1234 (Pubitemid 126684140)
9. J. Schmidt, J.D. Moschner, J. Henze, S. Dauwe, R. Hezel, Recent progress in the surface passivation of silicon solar cells using silicon nitride, in: W. Hoffmann, J.-L. Bal, H. Ossenbrink, W. Palz (Eds), Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition, 711 June 2004, Paris, France, WIP Munich, 2004, pp. 391396.
10. P.P. Altermatt, H. Plagwitz, R. Bock, J. Schmidt, R. Brendel, M.J. Kerr, A. Cuevas, The surface recombination velocity at boron-doped emitters: Comparison between various passivation techniques, in: J. Poortmans, H. Ossenbrink, E. Dunlop, P. Helm(Eds), Proceedings of the 21st European Photovoltaic Solar Energy Conference and Exhibition, 48 September 2006, Dresden, Germany, WIP Munich, 2006, pp. 647650.
11. H. Plagwitz, Surface passivation of crystalline silicon solar cells by amorphous silicon films, Ph.D. Thesis, Department of Mathematics and Physics, Gottfried Wilhelm Leibniz Universität Hannover, Germany, 2007.
12. S.W. Glunz, S. Janz, M. Hofmann, T. Roth, G. Willeke, Surface passivation of silicon solar cells using amorphous silicon carbide layers, in: Proceedings of the Fourth IEEE World Conference on Photovoltaic Energy Conversion, 812 May 2006, Waikoloa, Hawaii, USA, 2006, pp. 10161019.
13. S. Riegel, B. Raabe, R. Petres, S. Dixit, L. Zhou, G. Hahn, Towards higher efficiencies for crystalline silicon solar cells using SiC layers, in: Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, 15 September 2008, Valencia, Spain, WIP Munich, 2008, pp. 16041607.
14. M. Hofmann, P. Saint-Cast, D. Suwito, J. Seiffe, C. Schmidt, S. Kambor, L. Gautero, N. Kohn, J.-F. Nekarda, A. Leimenstoll, D. Wagenmann, D. Erath, J. Catoir, W. Wolke, S. Janz, D. Biro, A. Grohe, J. Rentsch, S.W. Glunz, R. Preu, Overview on crystalline silicon solar cells using PECVD rear passivation and laser-fired Contacts, in: Proc. 24th European Photovoltaic Solar energy conference and exhibition, 2125 September 2009, Hamburg, Germany, WIP Munich, 2009, pp. 15171522.
15. M. Hofmann, C. Schmidt, N. Kohn, J. Rentsch, S.W. Glunz, and R. Preu Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation Progress in Photovoltaics: Research and Applications 16 6 2008 509 518
16. M. Hofmann, S. Janz, C. Schmidt, S. Kambor, D. Suwito, N. Kohn, J. Rentsch, R. Preu, and S. Glunz Recent developments in rear-surface passivation at Fraunhofer ISE Solar Energy Materials and Solar Cells 93 2009 1074 1078
17. x anti-reflective coatings for silicon solar cells, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference and Exhibition, 37 September 2007, Milan, Italy, WIP Munich, 2007, pp. 16901693.
18. S. Gatz, H. Plagwitz, P.P. Altermatt, B. Terheiden, and R. Brendel Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells Applied Physics Letters 93 2008 173502
19. G. Agostinelli, P. Choulat, H.F.W. Dekkers, E. Vermarien, G. Beaucarne, Rear surface passivation for industrial solar cells on thin substrates, in: Proceedings of the Fourth IEEE World Conference on Photovoltaic Energy Conversion, 812 May 2006, Waikoloa, Hawaii, USA, 2006, pp. 10041007.
20. M. Hofmann, S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S.W. Glunz, and R. Preu PECVD-ONO: A new deposited firing stable rear surface passivation layer system for crystalline silicon solar cells Advances in OptoElectronics 2008 485467
21. J. Seiffe, L. Gautero, M. Hofmann, J. Rentsch, R. Preu, S. Weber, and R.A. Eichel Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride Journal of Applied Physics 109 2011 034105
22. x layers for high-quality silicon surface passivation Journal of Applied Physics 92 2002 2602 2609
23. S. Dauwe, Low-temperature surface passivation of crystalline silicon and its application to the rear side of solar cells, Ph.D. Thesis, Departement of Physics, Gottfried Wilhelm Leibniz Universität Hannover, Germany, 2004.
24. W. Beyer Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon Solar Energy Materials and Solar Cells 78 2003 235 267
25. R.A. Sinton, and A. Cuevas Contactless determination of currentvoltage characteristics and minoritycarrier lifetimes in semiconductors from quasisteadystate photoconductance data Applied Physics Letters 69 1996 2510 2512 (Pubitemid 126595545)
26. H. Nagel, C. Berge, and A.G. Aberle Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors Journal of Applied Physics 86 1999 6218 6221 (Pubitemid 129647838)
27. z alloys: A quantitative bonding analysis Physical Review B 38 1988 8171 8184
28. J. Müller, Neuartige, höchsteffiziente, rü ckseitenkontaktierte Solarzellen mit beidseitiger Lichtempfindlichkeit, Ph.D. Thesis, Departement of Physics, Gottfried Wilhelm Leibniz Universität Hannover, Germany, 2005, pp. 8795.
29. B. Fischer, Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements, Ph.D. Thesis, Universität Konstanz, 2003.
30. P.A. Basore, Extended spectral analysis of internal quantum efficiency, in: Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, 1014 May 1993, Louisville, USA, 1993, pp. 147152.
31. R. Brendel, and U. Rau Effective diffusion lengths for minority carriers in solar cells as determined from internal quantum efficiency analysis Journal of Applied Physics 85 1999 3634 3637 (Pubitemid 129310684)
32. S. Gatz, K. Bothe, J. Müller, T. Dullweber, and R. Brendel Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells Energy Procedia 8 2011 318 323